A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.

A microscopy system for imaging a sample can include a scanning electron microscope system configured for imaging a surface layer of the sample and a focused ion beam system configured for generating an ion beam for milling the surface layer away from a sample after it has been imaged. A movable mechanical shutter can be configured to be moved automatically into a position between the sample and the scanning electron microscope system, so that when the electron beam is not imaging the sample the movable mechanical shutter is positioned between the sample and the scanning electron microscope system.

A system for controlling a high-power ion beam is disclosed, such as for steering, measuring, and/or dissipating the beam's power. In one embodiment, the ion beam can be controlled by being imparted into a cylindrical tube (e.g., a faraday cup), and deflected to strike an interior tube wall at an angle, thereby increasing an impact area of the beam on the wall. By also rotating the deflected beam around a circumference of the interior wall, the impact area of the ion beam may be further increased, thereby absorbing (dissipating) the high-power ion beam on the wall. In another embodiment, the ion beam may be passed through first, second, and third adjustable magnetic rings. By adjusting a relative angle between the rings and a combined rotation angle of all of the rings, a deflected ion beam may be rotated around a circumference of the interior wall of a power-absorbing tube, accordingly.

Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.

An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.

A system for controlling a high-power ion beam is disclosed, such as for steering, measuring, and/or dissipating the beam's power. In one embodiment, the ion beam can be controlled by being imparted into a cylindrical tube (e.g., a faraday cup), and deflected to strike an interior tube wall at an angle, thereby increasing an impact area of the beam on the wall. By also rotating the deflected beam around a circumference of the interior wall, the impact area of the ion beam may be further increased, thereby absorbing (dissipating) the high-power ion beam on the wall. In another embodiment, the ion beam may be passed through first, second, and third adjustable magnetic rings. By adjusting a relative angle between the rings and a combined rotation angle of all of the rings, a deflected ion beam may be rotated around a circumference of the interior wall of a power-absorbing tube, accordingly.

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.