A detector includes a set of sensing elements, first section circuitry communicatively coupling a first set of sensing elements to an input of first signal processing circuitry, second section circuitry communicatively coupling a second set of sensing elements to an input of second signal processing circuitry, and interconnection circuitry communicatively coupling an output of the first signal processing circuitry to an output of the second signal processing circuitry. The interconnection circuitry may include an interconnection layer having interconnection switching elements communicatively coupled to outputs of analog signal paths of the detector. Interconnection switching elements may communicatively couple the outputs of adjacent analog signal paths. The detector may also include signal processing circuitry that includes a plurality of converters. The interconnection circuitry may be configured to selectively couple outputs of the first and second signal processing circuitry to the converters.

Quantitative Secondary Electron Detection (QSED) using the array of solid state devices (SSD) based electron-counters enable critical dimension metrology measurements in materials such as semiconductors, nanomaterials, and biological samples (FIG. 3). Methods and devices effect a quantitative detection of secondary electrons with the array of solid state detectors comprising a number of solid state detectors. An array senses the number of secondary electrons with a plurality of solid state detectors, counting the number of secondary electrons with a time to digital converter circuit in counter mode.

A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

The present disclosure relates to an apparatus and methods for generating a hybrid image by high-dynamic-range counting. In an embodiment, the apparatus includes a processing circuitry configured to acquire an image from a pixelated detector, obtain a sparsity map of the acquired image, the sparsity map indicating low-flux regions of the acquired image and high-flux regions of the acquired image, generate a low-flux image and a high-flux image based on the sparsity map, perform event analysis of the acquired image based on the low-flux image and the high-flux image, the event analysis including detecting, within the low-flux image, incident events by an event counting mode, multiply, by a normalization constant, resulting intensities of the high-flux image and the detected incident events of the low-flux image, and generate the hybrid image by merging the low-flux image and the high-flux image.

An electron detector comprises a sensor module comprising a sensor for detecting electrons, and an electronics module comprising circuitry for processing signals received from the sensor module. Wiring is provided for electrically connecting the sensor module to the electronics module. An adaptor is arranged between the sensor module and the electronics module. The adaptor comprises a passage for the wiring, and shielding elements for shielding from radiation.

An electron beam phase plate is provided where patterned radiation is provided to the phase plate to creates a corresponding electrical pattern, This electrical pattern provides a corresponding patterned modulation of the electron beam. Such modulation can be done in transmission or in reflection. This approach has numerous applications in electron microscopy, such as providing phase and/or amplitude shaping, aberration correction and providing phase contrast.

An apparatus includes an electron source coupled to provide an electron beam, a beam deflector arranged to provide a pulsed electron beam from the electron beam, a detector arranged to receive the pulsed electron beam after transmitting through a sample, and a controller coupled to control at least the beam deflector and the detector, the controller coupled to or including code that, when executed by the controller, causes the apparatus to establish the pulsed electron beam with pulse characteristics based on control of at least the beam deflector, wherein an illumination window is formed based on the pulse characteristics, the illumination window being a time frame when the sample is illuminated with a pulse of the pulsed electron beam, and to form a detection window for the detector and synchronize the detection window in relation to the illumination window, wherein detection events occurring in the detection window form the basis of an image, wherein the detection window determines a time frame when the detector converts the pulse of the pulsed electron beam transmitted through the sample to an electron induced signal.

An embodiment of electron microscope system is described that comprises an electron column pole piece and a light guide assembly operatively coupled together. The light guide assembly also includes one or more detectors, and a mirror with a pressure limiting aperture through which an electron beam from an electron source passes. The mirror is also configured to reflect light, as well as to collect back scattered electrons and secondary electrons.

A sample may be inspected by making particles traverse the sample. The particles that have traversed the sample hit a detector one-by-one. In response thereto, the detector provides a sequence of respective detection outputs. The sequence of respective detection outputs is processed so as to identify respective locations where respective incident particles have hit the detector. An image is generated on the basis of the respective locations that have been identified. In order to determine a location where an incident particle has hit the detector, an evaluation is made with regard to pre-established respective associations between, on the one hand, respective locations where incident particles have hit the detector and, on the other hand, respective detection outputs.

A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.