A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another, preferably by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

An electron beam detection element according to an exemplary embodiment includes a plurality of unit cells. Each of the plurality of unit cells includes a diode of avalanche multiplication type and a plurality of memories. The diode of avalanche multiplication type is configured to detect an electron beam. The plurality of memories store signals of different frames respectively, each of the signals being output from the diode.

A charged particle beam detector may include a circuit with a storage cell configured to receive a signal representing an output of a sensing element; a storage cell multiplexer configured to selectively transmit the signal representing the output of the sensing element to the storage cell; a threshold detector configured to compare the signal representing the output of the sensing element to a threshold; and a converter configured to perform signal processing on a signal transmitted from the storage cell.

A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sample. The pixelized electron detector includes multiple pixels arranged in a grid pattern. The multiple pixels may be configured to generate multiple detection signals, wherein each detection signal corresponds to the signal electrons received by a corresponding pixel of the pixelized electron detector. The apparatus further includes a controller includes circuitry configured to determine a topographical characteristic of a structure within the sample based on the detection signals generated by the multiple pixels, and identifying a defect within the sample based on the topographical characteristic of the structure of the sample.

A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another, preferably by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

A light detection and measurement device comprises a silicon photomultiplier, at least one thermoelectric cooler thermally coupled to the silicon photomultiplier, a sealed enclosure surrounding the silicon photomultiplier and the at least one thermoelectric cooler, the enclosure including a substantially transparent window thermally coupled to the silicon photomultiplier, and a heat sinking device thermally coupled to the enclosure configured to remove waste heat. A method of cooling a silicon photomultiplier is also described.

The present disclosure relates to transmission electron microscopy for evaluation of biological matter. According to an embodiment, the present disclosure further relates to an apparatus for determining the structure and/or elemental composition of a sample using 4D STEM, comprising a direct bombardment detector operating with global shutter readout, processing circuitry configured to acquire images of bright-field disks using either a contiguous array or non-contiguous array of detector pixel elements, correct distortions in the images, align each image of the images based on a centroid of the bright-field disk, calculate a radial profile of the images, normalize the radial profiles by a scaling factor, calculate the rotationally-averaged edge profile of the bright-field disk, and determine elemental composition within the specimen based on the characteristics of the edge profile of the bright-field disk corresponding to each specimen location.

A method and system for acquiring data from a pixelated image sensor for detecting charged particles. The method includes reading a pixel voltage of one or more of the multiple pixels multiple times without resetting the image sensor and digitizing the pixel into a first number of bits. The camera outputs a digitized compressed pixel voltage in a second, less, number of bits. The maximum range of the digitized compressed pixel voltage is less than a maximum range of the pixel voltage.

A method and system for acquiring data from a pixelated image sensor for detecting charged particles. The method includes reading a pixel voltage of one or more of the multiple pixels multiple times without resetting the image sensor and digitizing the pixel into a first number of bits. The camera outputs a digitized compressed pixel voltage in a second, less, number of bits. The maximum range of the digitized compressed pixel voltage is less than a maximum range of the pixel voltage.

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.