The disclosure relates to a method for characterizing a two-dimensional nanomaterial sample. The two-dimensional nanomaterial sample is placed in a vacuum chamber. An electron beam passes through the two-dimensional nanomaterial sample to form a diffraction electron beam and a transmission electron beam to form an image on an imaging device. An angle θ between the diffraction electron beam and the transmission electron is obtained. A lattice period d of the two-dimensional nanomaterial sample is calculated according to a formula d sin θ≅dθ=λ, where λ represents a wavelength of the electron beam.

The present invention provides: a scintillator which is reduced in the intensity of the afterglow, while having increased luminous intensity; and a charged particle radiation apparatus. A scintillator according to the present invention is characterized in that: a base material, a buffer layer, a light emitting part and a first conductive layer are sequentially stacked in this order; the light emitting part contains one or more elements that are selected from the group consisting of Ga, Zn, In, Al, Cd, Mg, Ca and Sr; and a second conductive layer is provided between the base material and the light emitting part.

There is provided a charged particle beam apparatus capable of obtaining a high SN ratio with a small electron irradiation amount. The charged particle beam apparatus includes a charged particle detection device. The charged particle detection device detects an analog pulse waveform signal (110) in a detection of emitted electrons (1 event) when one primary electron enters a sample, converts the analog pulse waveform signal (110) into a digital signal (111), perform a wave height discrimination (112) with the use of a unit peak corresponding electron, and outputs the digital signal (111) as a multilevel count value.

A detection circuit for accurately detecting a very small foreign material and an inspection/measurement device using the same are provided. The inspection/measurement device includes: an irradiation section that irradiates a laser beam to a surface of a specimen; and a detection section that detects scattered light from the surface of the specimen and generates a detection signal. The detection section includes: a photon counting sensor that outputs M output signals from photo-detecting elements of N pixels (M and N are natural numbers, and M<N); M current-voltage conversion sections that execute current-voltage conversion on the output signals of the photon counting sensor respectively; a voltage application section that applies reference voltages to the current-voltage conversion sections; and a detection signal generation section that generates a detection signal on the basis of the outputs of the current-voltage conversion sections.

An electron beam detection apparatus includes a first aperture element including a first set of apertures. The apparatus includes a second aperture element including a second set of apertures. The second set of apertures is arranged in a pattern corresponding with the pattern of the first plurality of apertures. The detection apparatus includes an electron-photon conversion element configured to receive electrons of the electron beam transmitted through the first and second aperture elements. The electron-photon conversion element is configured to generate photons in response to the received electrons. The detection apparatus includes an optical assembly including one or more optical elements. The detection apparatus includes a detector assembly. The optical elements of the optical assembly are configured to direct the generated photons from the electron-photon conversion system to the detector assembly.

A current quantity measuring method of multi-beams irradiates with a charged particle beam, amplifies an electric signal corresponding to multi-beams passed through a plurality of aperture holes of an aperture member having the plurality of aperture holes to form multi-beams by irradiation with the charged particle beam, receives the electric signal amplified in the minute current measurement unit and counting the number of electrons in the multi-beams, calculates a current quantity of the multi-beams passed through the plurality of aperture holes by using a product of the calculated number of electrons in the multi-beams and elementary charge, and corrects irradiation time of the charged particle beam of each of the plurality of aperture holes on the basis of the calculated current quantity.

A method and an apparatus are provided for inspecting a sample. The apparatus includes a sample holder for holding the sample, a charged particle column for generating and focusing one or more charged particle beams at one or more charged particle beam spots onto the sample, a scanning deflector for moving the charged particle beam spot(s) over the sample, a photon detector configured for detecting photons created when the one or more charged particle beams impinge on the sample or when the one or more charged particle beams impinge onto a layer of luminescent material after transmission through the sample, an optical assembly for projecting or imaging at least part of the photons from the charged particle beam spot(s) along an optical beam path onto the photon detector, and a shifting unit for shifting the optical beam path and/or the photon detector with respect to each other.

A charged particle beam apparatus covering a wide range of detection angles of charged particles emitted from a sample includes an objective lens for converging charged particle beams emitted from a charged particle source and a detector for detecting charged particles emitted from a sample. The objective lens includes inner and outer magnetic paths which are formed so as to enclose a coil. A first inner magnetic path is disposed at a position opposite to an optical axis of the charged particle beams. A second inner magnetic path, formed at a slant with respect to the optical axis of the charged particle beams, includes a leading end. A detection surface of the detector is disposed at the outer side from a virtual straight line that passes through the leading end and that is parallel to the optical axis of the charged particle beams.

A charged particle beam device includes a detector 109 converting a photon emitted by a scintillator into an electric signal and a signal processing unit 110 processing the electric signal from the detector 109. The signal processing unit 110 detects a peak position of the electric signal, steepness of a rising section associated with the peak position, and steepness of a falling section associated with the peak position and classifies the peak position based on the steepness of the rising section and the steepness of the falling section.

The present invention relates to a sensor for electron detection emitted from an object to be used with a charged particle beam column being operated at a certain column and wafer voltage. The sensor is configured and operable to at least reduce interaction of negative ions with the active area of the sensor while minimizing electrons energy loss. The sensor is also configured and operable to minimize both gradual degradation of a cathodoluminescence efficiency of the active area and dynamic change of cathodoluminescence generated during operation of the sensor and evolving throughout the scintillator's lifetime.