Disclosed herein are example embodiments for performing microscopy using microscope systems that combine both scanning-electron-microscope-cathodoluminescence (SEM-CL) microscopy and focused-ion-beam ion-induced optical emission (FIB-IOE) microscopy. Certain embodiments comprise operating a microscopy system in a first microscopy mode in which an electron beam interacts with a sample at a sample location and causes first-mode photons and electrons to be emitted, the first-mode photons including photons generated through a cathodoluminescence process; and operating a microscopy system in a second microscopy mode in which an ion beam interacts with a sample at the sample location and causes second-mode photons to be emitted, the second-mode photons including photons generated through an ion-induced luminescence process and photons generated through an atomic de-excitation process.

In one embodiment, a data processing method is for processing data in a writing apparatus performing multiple writing by using multiple beams. The data is for controlling an irradiation amount for each beam. The method includes generating irradiation amount data for each of a plurality of layers, the irradiation amount data defining an irradiation amount for each of a plurality of irradiation position, and the plurality of layers corresponding to writing paths in multiple writing, performing a correction process on the irradiation amounts defined in the irradiation amount data provided for each layer, calculating a sum of the irradiation amounts for the respective irradiation positions defined in the corrected irradiation amount data, comparing the sums between the plurality of layers, and determining whether or not an error has occurred in the correction process based on the comparison result.

There is provided a plasma electric field monitor that monitors an electric field intensity of a wave in a plasma processing apparatus for forming a plasma inside a chamber in which a substrate is accommodated and processing the substrate with the plasma, the plasma having the wave on a surface thereof and existing near an inner wall surface of the chamber, including: at least one monopole antenna provided to extend inward of the chamber from a wall portion of the chamber and perpendicular to the inner wall surface of the chamber, and configured to receive the wave formed on the surface of the plasma; and a coaxial line configured to extract a signal of the electric field intensity of the wave received by the at least one monopole antenna.

Methods for in-situ and real-time chamber condition monitoring is provided. For example, in one embodiment, for each wafer in a chamber, a frequency and wavelength of the free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over at least part of said sample. A first detector is used for obtaining measured detector signals corresponding to emissions of a first type from the sample at a plurality of sample positions. According to the method, a set of data class elements is provided, wherein each data class element relates an expected detector signal to a corresponding sample information value. The measured detector signals are processed, and processing comprises comparing said measured detector signals to said set of data class elements; determining at least one probability that said measured detector signals belong to a certain one of said set of data class elements; and assigning at least one sample information value and said at least one probability to each of the plurality of sample positions. Finally, sample information values and corresponding probability can be represented in data.

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth that retards a phase velocity of an RF traveling wave to match the kinetic velocity of a continuous electron beam, causing the beam to oscillate before being chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The TWMCS further comprises an electron pulse picker (EPP) that applies a pulsed transverse electric field across the TWMCS to deflect electrons out of the beam, allowing only selected electrons and/or groups of electrons to pass through. The EPP pulses can be synchronized with the RF traveling wave and/or with a pumping trigger of a transverse electron microscope (TEM), for example to obtain dynamic TEM images in real time.

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth that retards a phase velocity of an RF traveling wave to match the kinetic velocity of a continuous electron beam, causing the beam to oscillate before being chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The TWMCS further comprises an electron pulse picker (EPP) that applies a pulsed transverse electric field across the TWMCS to deflect electrons out of the beam, allowing only selected electrons and/or groups of electrons to pass through. The EPP pulses can be synchronized with the RF traveling wave and/or with a pumping trigger of a transverse electron microscope (TEM), for example to obtain dynamic TEM images in real time.

A detection device includes a substrate on which a connector connected to a transmission line for microwaves, a detection circuit configured to convert the microwaves inputted from the transmission line via the connector to a detection value indicating power of the microwaves, and an output port configured to output the detection value obtained by the detection circuit are disposed. The detection device further includes a housing that has a first opening and a second opening and accommodates the substrate in a state where the connector is inserted into the first opening and the output port is inserted into the second opening. The detection device further includes a first sealing member provided at the first opening of the housing to seal a periphery of the connector; and a second sealing member provided at the second opening of the housing to seal a periphery of the output port.

The present application relates to a method and an apparatus for determining a wavefront of a massive particle beam, including the steps of: (a) recording two or more images of a reference structure using the massive particle beam under different recording conditions; (b) generating point spread functions for the two or more recorded images with a modified reference image of the reference structure; and (c) performing a phase reconstruction of the massive particle beam on the basis of the generated point spread functions and the different recording conditions, for the purposes of determining the wavefront.

A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber configured to perform a plasma process on a wafer, a viewport configured to transmit plasma light generated in the chamber, a rotation module coupled to the viewport to be rotatable around a rotation axis, and an OES (Optical Emission Spectroscopy) device which is coupled to the rotation module and configured to receive the plasma light, wherein the rotation module includes a first surface facing the viewport and a second surface facing the OES device, wherein the first surface is configured to block a part of the plasma light, and includes a first opening through which an inside of the rotation module is configured to be exposed to a part of the plasma light, and wherein the second surface includes a second opening configured to be in light communication with the first opening.