A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

In a plasma processing apparatus, a mounting table have a first mounting surface on which a target object or a jig is mounted and a second mounting surface on which a ring member is mounted. The jig is used for measuring a thickness of the ring member disposed around the target object and having a facing portion facing an upper surface of the ring member. Elevating mechanisms lift or lower the ring member with respect to the second mounting surface. An acquisition unit acquires gap information indicating a gap dimension between the second mounting surface and the facing portion of the jig. A measurement unit measures a lifted distance of the ring member from the second mounting surface. A thickness calculation unit calculates the thickness of the ring member based on the gap dimension and the measured lifted distance of the ring member.

A method of characterizing a region in a sample under study, and related systems, is disclosed. In once aspect, the sample under study comprises a first region having first crystalline properties and a second region having second crystalline properties. The method comprises irradiating the sample under study with an electron beam, the average relative angle between the electron beam and the sample under study being selected so that a contribution in the backscattered or forward scattered signal of the first region is distinguishable from that of the second region. The method further comprises detecting the backscattered or forward scattered electrons, and deriving a characteristic of the first and/or the second region from the detected backscattered or forward scattered electrons. The instantaneous relative angle between the electron beam and the sample under study is modulated with a predetermined modulation frequency during the irradiating the sample under study with an electron beam. Detecting the backscattered or forward scattered electrons is performed at the predetermined modulation frequency.

A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

A fine atomic clock includes a particle source, an MW filter, an atomic gun, a Magneto-MW Trap (MMT) unit, an energy injection unit, and a probing unit. The particle source emits particles. The MW filter receives the particles and generates a plurality of coherent MW of particle beams. The particle beams forms a virtual space-time lattice in an enclosed space. The atomic gun emits a sample. The MMT unit utilizes a magnetic field to trap the sample in the virtual space-time lattice, and utilizes the particle beams to cool down the sample. The sample corresponds to fermions or molecules. The energy injection unit injects energy into the sample to activate the sample into an excitation state. The probing unit activates emission of the sample. An emission frequency of the sample corresponds to a characteristic emission frequency of the sample, and the emission frequency generates a standard time signal.

An EDS 5 acquires first spectrum data by detecting an X-ray generated from a sample. A WDS 6 acquires second spectrum data by detecting the X-ray generated from the sample. A phase distribution map generation processing unit 11 generates a phase distribution map of a substance of the sample in a measurement region, on the basis of the first spectrum data acquired with respect to each pixel in the measurement region on a sample surface. A composition information acquisition processing unit 13 acquires element composition information of each phase, on the basis of the second spectrum data acquired with respect to a position on the sample corresponding to a representative pixel in the measurement region corresponding to each of the phases of the phase distribution map.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism in an inspection station are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

An EDS 5 acquires first spectrum data by detecting an X-ray generated from a sample. A WDS 6 acquires second spectrum data by detecting the X-ray generated from the sample. A phase distribution map generation processing unit 11 generates a phase distribution map of a substance of the sample in a measurement region, on the basis of the first spectrum data acquired with respect to each pixel in the measurement region on a sample surface. A composition information acquisition processing unit 13 acquires element composition information of each phase, on the basis of the second spectrum data acquired with respect to a position on the sample corresponding to a representative pixel in the measurement region corresponding to each of the phases of the phase distribution map.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, an electron beam inspection system includes multiple stages or multiple chambers, where the chambers/stages (N2) are organized to form one or more paths for wafer/mask inspection. An inspection procedure in each chamber (or at each stage) is determined by its order in the path and the relative columns used. For a system with N chambers/stages, a maximum number of N wafers/masks can be processed simultaneously.