A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5≤X/Rp≤5000 is satisfied.

Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Provided is an impedance matching device capable of promptly improving an impedance mismatch between a high-frequency power source and a load even when the impedance of the load continuously changes. An impedance matching device according to the present invention is for use in a high-frequency power system configured to supply a load with an output from a high-frequency power source via a matching circuit whose constant is mechanically changed, and the impedance matching device includes a matching condition value acquisition portion for acquiring a matching condition value indicating a matching condition between the high-frequency power source and a load, and a control portion for controlling an oscillation frequency of the high-frequency power source based on the matching condition value. When the matching condition value indicates deterioration of the matching condition, the control portion changes the oscillation frequency with a first slope toward improving the matching condition, and thereafter shifts the oscillation frequency back to an original value with a second slope more gradual than the first slope.

A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrode includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space; a plate separating the inner space into a first space which is above and a second space which is below and having a plurality of through holes; a first gas supply unit configured to supply a first gas to the first space; a plasma source for generating a plasma at the first space or the second space; and a monitoring unit installed at the plate and configured to monitor a characteristic of the plasma generated at the first space or the second space.

A plasma source comprises a metal member having an inlet and forming a wall that delimits an upstream flow of a processing gas supplied from the inlet, a ceramic member having an outlet and forming a wall that delimits a downstream flow of the processing gas discharged from the outlet, and a power supply device configured to supply a power for plasma generation into a chamber. The chamber includes the metal member and the ceramic member, and is configured to discharge an activated gas generated by producing plasma from the processing gas to the outside of the chamber through the outlet.

This invention is an antenna structure inducing plasma in a chamber with applied alternative power, comprising: a first antenna segment and a second antenna segment arranged based on a virtual central axis to have a first curvature radius and a second curvature radius respectively, the central axis crossing a first plane, and a first capacitive load electrically connecting the first antenna segment and the second antenna segment, wherein the first antenna segment extends from one end of the first capacitive load with the first curvature radius having a first length and the second antenna segment extends from other end of the first capacitive load with the second curvature radius having a second length, and wherein a sum of the first length and the second length is shorter than a circumference of the first curvature radius or the second curvature radius.

A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

Disclosed is a method of treating a substrate by using a substrate treating apparatus generating plasma in a treatment space by applying microwaves, the method including: a plasma treatment operation of treating a substrate with the plasma; a replacement operation in which the plasma treatment operation is performed a preset number of times and a component included in the substrate treating apparatus is replaced; and a backup operation of backing up the substrate treating apparatus after the replacement operation, in which the backup operation includes a bake purge operation for removing byproducts present in the component.