An imprint apparatus that forms a pattern of an imprint material on a substrate with use of a mold includes a mold holding unit configured to hold the mold, a suction unit provided at the mold holding unit and configured to suction a gas in a space in which the mold and the substrate face each other, a detector configured to detect particles included in the gas suctioned by the suction unit, and a control unit configured to perform error processing depending on a result of detection performed by the detector.

According to one embodiment, an imprint apparatus that presses a fine pattern of an original plate against a photo-curable resin dropped onto a substrate, and transfers the fine pattern to the photo-curable resin by applying light, includes a dropping unit that drops the photo-curable resin onto a shot region obtained by dividing the substrate into a plurality of sections, an original plate supporting unit that stamps the original plate on the photo-curable resin on the substrate, the original plate being supported the fine pattern towards the substrate side, and a substrate supporting unit that supports the substrate and moves the substrate such that a position of a predetermined shot region of the substrate is a dropping position of the dropping unit or a stamping position of the original plate, in which the dropping unit is controlled such that the photo-curable resin is sequentially dropped onto the plurality of shot regions of the substrate, and the original plate supporting unit is controlled such that the fine pattern is transferred by sequentially stamping the original plate on the photo-curable resin dropped onto the plurality of shot regions, while operating the substrate supporting unit.

A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate While spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

The present application provides a method for manufacturing a semiconductor structure, a semiconductor structure, and a memory. The method for manufacturing a semiconductor structure includes the following steps: providing a substrate, and forming a stabilizing layer on the substrate; forming a stabilizing structure consisting of a plurality of linear structures and grooves among the linear structures; forming a hard mask layer covering the stabilizing structure; forming a mask pattern connected to a top of the linear structure and an inner wall of the groove on the hard mask layer; and transferring the mask pattern to the substrate.

A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

The present disclosure relates to an exposure pattern, an exposure mask, and a method for forming an exposure pattern by the same, and the exposure pattern is an exposure pattern formed by a division exposure, and is characterized by that, in an area where a first exposure area formed by the first exposure and a second exposure area formed by the second exposure overlap each other, an area of a first unit pattern area constituting the first exposure area and an area of a second unit pattern area constituting the second exposure area are different from each other.

Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.

Provided are a method for producing a composition for forming an imprint pattern, including a filtering step of filtering a precursor composition to obtain a composition for forming an imprint pattern, in which in the filtering step, a speed at which the precursor composition passes through a filter does not continuously exceed 0.9 cm per hour for 10 seconds or longer; a method for producing a cured substance formed of the composition for forming an imprint pattern; an imprint pattern producing method using the composition for forming an imprint pattern; and a method for manufacturing a device, which includes the imprint pattern producing method.

A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a first energy-sensitive pattern over the target layer. The method also includes forming a lining layer covering the first energy-sensitive pattern, and forming a second energy-sensitive pattern over the lining layer. The first energy-sensitive pattern and the second energy-sensitive pattern are staggered. The method further includes performing an etching process to form a first opening and a second opening in the target layer. The first opening and the second opening have different depths.

A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a first energy-sensitive pattern over the target layer. The method also includes performing an energy treating process to transform an upper portion of the first energy-sensitive pattern into a treated portion, forming a lining layer covering the first energy-sensitive pattern, and forming a second energy-sensitive pattern over the lining layer. The first energy-sensitive pattern and the second energy-sensitive pattern are staggered. The method further includes performing an etching process to form a first opening and a second opening in the target layer. The first opening and the second opening have different depths.