A method of forming a semiconductor device includes: depositing a first conductive plate and a second conductive plate adjacent to the first conductive plate; depositing a first insulating plate on the first conductive plate and the second conductive plate; depositing a third conductive plate on the first insulating plate; depositing a second insulating plate on the third conductive plate; forming a fourth conductive plate on the second insulating plate; forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate; and forming a second conductive via penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate.

A lithographic printing plate precursor including an image recording layer containing an infrared absorber represented by Formula I, on a support, and a method of producing a lithographic printing plate and a lithographic printing method using the lithographic printing plate precursor. ##STR00001##

A manufacturing method of a semiconductor structure includes at least the following steps. A patterned mask layer with a first opening is formed on a dielectric layer overlying a semiconductor substrate. A portion of the dielectric layer accessibly exposed by the first opening of the patterned mask layer is removed to form a second opening. A first protective film is formed on inner sidewalls of the dielectric layer and the patterned mask layer, where the second opening and the first protective film are formed at the same step. A second protective film is formed on the first protective film to form a protective structure covering the inner sidewalls. A portion of the semiconductor substrate accessibly exposed by the second opening is removed to form a via hole including an undercut underlying the protective structure. The via hole is trimmed and a through substrate via is formed in the via hole.

A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C.sub.6-40 arylene group derived from polyhydroxy aromatic compound; B is C.sub.6-40 arylene group or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X.sup.+ is H.sup.+, NH.sub.4.sup.+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C.sub.1-10 alkyl group or C.sub.6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C.sub.4-40 ring together with carbon atom to which they are bonded. ##STR00001##

A method of manufacturing a patterned stamp (100) for patterning a contoured surface (10) is disclosed. The method comprises applying a layer (115) of a pliable material precursor over a master (50) carrying an inverse pattern (52) to form a desired pattern (112) in said layer; curing the pliable material precursor to form a pliable stamp layer (120) comprising said desired pattern; providing an intermediate stamp structure by adhering a porous pliable support layer (130) to the pliable stamp layer; releasing the intermediate stamp structure from the master; forcing the intermediate stamp structure onto the contoured surface with said pattern of features facing the contoured surface; forming the patterned stamp by filling the porous pliable support layer with a filler material to reduce the pliability of the support layer; and removing the patterned stamp from the contoured surface. A corresponding patterned stamp, imprinting method and imprinted article are also disclosed.

A projection exposure device projects exposure light onto a substrate via a microlens array. The projection exposure device includes a scanning exposure unit that moves the microlens array along a scanning direction from one end toward another end of the substrate, and a microlens array shift unit that moves the microlens array in a shift direction intersecting with the scanning direction during movement of the microlens array caused by the scanning exposure unit.

A photomask layout includes: a substrate region; a lower stepped region at a region of the substrate region; and a pattern region at least partially crossing the lower stepped region and including at least one notch portion at an area overlapping the lower stepped region. A method of forming a pattern is also provided.

Disclosed herein are a resin composition for underlayer film formation which is capable of forming an underlayer film having good adhesiveness to a base material and good surface state, an imprint forming kit, a laminate, a pattern forming method, and a method for producing a device. Provided is a resin composition for underlayer film formation, including a resin, a nucleophilic catalyst, and a solvent, in which the content of the nucleophilic catalyst is 0.01 to 0.3 mass % with respect to the solid content of the resin composition for underlayer film formation.

A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1):

R.sup.1COOCH.sub.2CH.sub.2CFHCF.sub.2SO.sub.3.sup.−M.sup.+  (1)

where: R.sup.1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M.sup.+ represents a counter cation.