Patent classifications
H01L21/027
Patterning material including silicon-containing layer and method for semiconductor device fabrication
In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.
Nanofabrication method with correction of distortion within an imprint system
A nanofabrication method comprises receiving information regarding a distortion within an imprint system, generating a first drop pattern of formable material based on the received information, dispensing a first plurality of drops onto a substrate according to the first drop pattern, contacting the dispensed first plurality of drops with a patternless superstrate to form a first layer of formable material, forming a first cured layer by curing the first layer of formable material while the superstrate is contacting the first layer of formable material, separating the superstrate from the first cured layer, depositing an etch resistant layer on the first cured layer, generating a second drop pattern of formable material, dispensing a second plurality of drops onto the etch resistant layer according to the second drop pattern, and contacting the dispensed second plurality of drops with a patterned template to form a second layer of formable material.
Method and layout of an integrated circuit
A method of manufacturing an integrated circuit includes adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first and second pair of conductive patterns on the corresponding first and second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and a second set of conductive structures based on the second pair of conductive patterns. A first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. One spacing of a first set of spacings is different from another spacing of the first set of spacings.
Method and layout of an integrated circuit
A method of manufacturing an integrated circuit includes adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first and second pair of conductive patterns on the corresponding first and second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and a second set of conductive structures based on the second pair of conductive patterns. A first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. One spacing of a first set of spacings is different from another spacing of the first set of spacings.
Priming material for substrate coating
A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and identifying a material of the substrate upon which a layer is to be formed. A priming material is dispensed on the material of the substrate, and a film-forming material is applied to the priming material. The priming material includes a molecule containing a first group based on an attribute of the substrate material and a second group based on an attribute of the film-forming material. Suitable attributes of the substrate material and the film-forming material include water affinity and degree of polarity and the first and second groups may be selected to have a water affinity or degree of polarity that corresponds to that of the substrate material and the film-forming material, respectively.
Method for manufacturing cured product pattern, method for manufacturing processed substrate, method for manufacturing circuit board, method for manufacturing electronic component, and method for manufacturing imprint mold
A method for manufacturing a cured product pattern of a curable composition includes the steps of, in sequence, depositing a droplet of the curable composition onto a substrate; bringing a mold having an uneven pattern formed in a surface thereof into contact with the curable composition; curing the curable composition; and releasing a cured product of the curable composition from the mold. The mold has a recess having a bottom surface and a stair structure arranged to form an opening surface that becomes wider from the bottom surface toward the surface of the mold. In the contact step, the curable composition comes into contact with the stair portion after a top of the droplet comes into contact with the bottom surface.
Kit, composition for forming underlayer film for imprinting, pattern forming method, and method for manufacturing semiconductor device
Provided is a kit including a curable composition for imprinting, and a composition for forming an underlayer film for imprinting, in which the composition for forming an underlayer film for imprinting contains a polymer having a polymerizable functional group, and a compound in which the lower one of a boiling point and a thermal decomposition temperature is 480° C. or higher and ΔHSP, which is a Hansen solubility parameter distance from a component with the highest content contained in the curable composition for imprinting, is 2.5 or less. Furthermore, the present invention relates to a composition for forming an underlayer film for imprinting, a pattern forming method, and a method for manufacturing a semiconductor device, which are related to the kit.
METHOD FOR FORMING PHOTORESIST PATTERNS
A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.
METHODS FOR DRY PRINTING CARBON NANOTUBE MEMBRANES
Methods for preparing a nanotube membrane for use in a pellicle membrane using dry printing are disclosed. Nanotube fibers are produced in a reaction vessel and dry sprayed onto a filter to form the nanotube membrane. The thickness of the nanotube membrane can be controlled by moving the reaction vessel and the filter relative to each other, or by further processing to reduce the thickness of the layer deposited onto the filter. This method reduces the number of process steps, reducing overall production time, and can also be used to produce larger membranes. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. A conformal coating may applied to an outer surface of the pellicle membrane to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.
PHOTORESIST COMPOSITION AND METHODS OF USE
Novel photoresist additive compositions including developer solubility groups which enhance the solubility of the photoresist additive in a developer, such as a TMAH developer. The novel photoresist additive compositions also include functional groups to address outgassing and out-of-band issues.