A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.

The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO.sub.2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction.

A first surface of a debonder defines a recess that holds an assembly that includes a wafer bonded to a carrier plate having a first diameter that is larger than a second diameter of the wafer. The plate includes a peripheral area not covered by the wafer, and when the wafer of the assembly is placed within the recess, a portion of the peripheral area of the plate engages a portion of the first surface. A second surface of the debonder is disposed in the recess and is separated from the first surface. The second surface includes suction openings that deliver suction to the recess. A third surface of the debonder substantially connects the first and the second surfaces and includes an opening dimensioned to limit a pressure differential between the recess and outside the recess during application of the suction.

A first surface of a debonder defines a recess to hold an assembly that includes a wafer bonded to a carrier plate having a first diameter that is larger than a second diameter of the wafer. The carrier plate includes a peripheral area not covered by the wafer, and when the wafer of the assembly is placed within the recess, a portion of the peripheral area of the carrier plate engages a portion of the first surface. A second surface of the debonder is disposed in the recess and is separated from the first surface, where the second surface includes suction openings that deliver a suction force to the recess, and a portion of the second surface is in contact with a heat source.

A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

A cleaning device includes: a substrate rotation mechanism that holds and rotates a substrate around center axis thereof; a first single-tube nozzle that discharges first cleaning liquid toward a top surface of the substrate; and a second single-tube nozzle that discharges second cleaning liquid toward the top surface of the substrate. The first single-tube nozzle and the second single-tube nozzle are disposed such that the second single-tube nozzle discharges the second cleaning liquid in a forward direction of a rotation direction of the substrate at a position farther away from the center of the substrate than a landing position of the first cleaning liquid, and a part is generated in which liquid flow on the top surface of the substrate after landing of the first cleaning liquid and liquid flow on the top surface of the substrate after landing of the second cleaning liquid are combined.