Disclosed is an electrostatic chuck with a cooling structure using a cooling gas. The electrostatic chuck comprises: an electrostatic chuck plate that includes a plurality of first cooling gas holes formed in a first region and a plurality of second cooling gas holes formed in a second region; and a base member that includes a first flow path pattern connected to the plurality of first cooling gas holes, a second flow path pattern connected to the plurality of second cooling gas holes, and an inlet moving pattern changing a position of an inlet of a cooling gas injected into the first flow path pattern.

Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.

The present invention provides a prepreg for a coreless substrate and a coreless substrate and a semiconductor package using the prepreg, which can satisfy heat resistance, low thermal expansion, and bonding strength with a metal circuit at a level required for the coreless substrate. Specifically, the prepreg for a coreless substrate contains a thermosetting resin composition containing (a) dicyandiamide, (b) an adduct of a tertiary phosphine and quinones, (c) an amine compound having at least two primary amino groups, and (d) a maleimide compound having at least two primary amino groups having at least two N-substituted maleimide groups. Instead of (c) the amine compound having at least two primary amino groups and (d) the maleimide compound, having at least two N-substituted maleimide groups, (X) an amino-modified polyimide resin obtained by reacting them may be used.

A micro-LED display device and a manufacturing method thereof are disclosed. The method comprises: forming micro-LEDs (202) on a carrier substrate (201), wherein the carrier substrate (201) is transparent for a laser which is used in laser lifting-off; filling trenches between the micro-LEDs (202) on the carrier substrate (201) with a holding material (209); performing a laser lifting-off on selected ones of the micro-LEDs (202) to lift off them from the carrier substrate (201), wherein the selected micro-LEDs (202) are held on the carrier substrate (201) through the holding material (209); bonding the selected micro-LEDs (202) onto a receiving substrate (207) of the micro-LED display device; separating the selected micro-LEDs (202) from the carrier substrate (201) to transfer them to the receiving substrate (207).

A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.

An optical axis adjusting method includes a position detecting step of emitting a laser beam from a laser oscillator, applying the laser beam to a processing point, and detecting the position of the laser beam by using a position detecting unit set at the processing point, a storing step of storing the position of the laser beam as detected in the position detecting step as a reference position, and an adjusting step of operating an adjusting mechanism of each optical component holder in the case that the position of the laser beam is deviated from the reference position after performing maintenance of each optical component, thereby adjusting the position of the laser beam so that the position of the laser beam is shifted back to the reference position.

A substrate-conveying support tape includes: a support film; a primer layer provided on the support film; and a temporary fixing material layer provided on the primer layer, in which the support film is a polyimide film, the temporary fixing material layer contains a thermoplastic resin, and the primer layer contains at least one selected from the group consisting of a silane coupling agent having an epoxy group or a ureido group, an epoxy resin, a polyurethane rubber, and an acrylic rubber having an acid value of 5 mgKOH/g or more.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3); and a pair of intermediate layers (6, 7) that are interposed between the pair of ceramic plates (2, 3) and the conductive layer (4) and are in contact with the pair of ceramic plates (2, 3) and the conductive layer (4).

Described are techniques for applying a cured polymeric blanket coating onto a surface, specifically for applying a blanket-coated cured polymeric coating onto a surface of a substrate that is useful as an electrostatic chuck for processing semiconductor wafers.