The present disclosure relates to an organic light emitting diode display panel and a method of manufacturing the organic light emitting diode display panel. A display panel, including: a plurality of first light emitting layers arranged in an array in a first direction and a second direction; and a pixel defining layer including a plurality of first openings, wherein each first opening has a reduced size in the first direction, so that the corresponding first light emitting zone defined by the first opening has a first misalignment tolerance range in the first direction, and has a second misalignment tolerance range in the second direction, the corresponding first light emitting zone is allowed to shift in the first direction within the first misalignment tolerance range without overlapping the shaded region of the corresponding first light emitting layer.

An organic light emitting display device includes a substrate, a buffer layer, an active layer, a gate insulation layer, a protective insulating layer, a gate electrode, an insulating interlayer, source and drain electrodes, and a sub-pixel structure. The buffer layer is disposed on the substrate. The active layer is disposed on the buffer layer, and has a source region, a drain region, and a channel region. The gate insulation layer is disposed in the channel region on the active layer. The protective insulating layer is disposed on the buffer layer, the source and drain regions of the active layer, and the gate insulation layer. The gate electrode is disposed in the channel region on the protective insulating layer. The insulating interlayer is disposed on the gate electrode. The source and drain electrodes are disposed on the insulating interlayer.

A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

A method of forming a device on a substrate with recessed first/third areas relative to a second area by forming a fin in the second area, forming first source/drain regions (with first channel region therebetween) by first/second implantations, forming second source/drain regions in the third area (defining second channel region therebetween) by the second implantation, forming third source/drain regions in the fin (defining third channel region therebetween) by third implantation, forming a floating gate over a first portion of the first channel region by first polysilicon deposition, forming a control gate over the floating gate by second polysilicon deposition, forming an erase gate over the first source region and a device gate over the second channel region by third polysilicon deposition, and forming a word line gate over a second portion of the first channel region and a logic gate over the third channel region by metal deposition.

A method of forming a device on a substrate with recessed first/third areas relative to a second area by forming a fin in the second area, forming first source/drain regions (with first channel region therebetween) by first/second implantations, forming second source/drain regions in the third area (defining second channel region therebetween) by the second implantation, forming third source/drain regions in the fin (defining third channel region therebetween) by third implantation, forming a floating gate over a first portion of the first channel region by first polysilicon deposition, forming a control gate over the floating gate by second polysilicon deposition, forming an erase gate over the first source region and a device gate over the second channel region by third polysilicon deposition, and forming a word line gate over a second portion of the first channel region and a logic gate over the third channel region by metal deposition.

A light-emitting substrate, comprising a base, a pixel defining layer arranged on the base, and a plurality of light-emitting devices. The pixel defining layer is provided with a plurality of openings, and each light-emitting device comprises a quantum dot light-emitting pattern arranged in an opening, wherein each opening has a side wall, the side wall comprises a first portion and a second portion, the first portion is the portion of the side wall that is in contact with the quantum dot light-emitting pattern, and the second portion is the portion of the side wall that is away from the base relative to the first portion. The light-emitting substrate further comprises at least one blocking unit, each blocking unit comprises at least one siloxane chain segment, and each siloxane chain segment comprises at least one silicon oxygen bond; and each blocking unit is located in an opening, and at least one siloxane chain segment in each blocking unit is grafted to the second portion of a corresponding side wall.

Systems, devices and methods of manufacturing a system on silicon wafer (SoSW) device and package are described herein. A plurality of functional dies is formed in a silicon wafer. Different sets of masks are used to form different types of the functional dies in the silicon wafer. A first redistribution structure is formed over the silicon wafer and provides local interconnects between adjacent dies of the same type and/or of different types. A second redistribution structure may be formed over the first redistribution layer and provides semi-global and/or global interconnects between non-adjacent dies of the same type and/or of different types. An optional backside redistribution structure may be formed over a second side of the silicon wafer opposite the first redistribution layer. The optional backside redistribution structure may provide backside interconnects between functional dies of different types.

Systems, devices and methods of manufacturing a system on silicon wafer (SoSW) device and package are described herein. A plurality of functional dies is formed in a silicon wafer. Different sets of masks are used to form different types of the functional dies in the silicon wafer. A first redistribution structure is formed over the silicon wafer and provides local interconnects between adjacent dies of the same type and/or of different types. A second redistribution structure may be formed over the first redistribution layer and provides semi-global and/or global interconnects between non-adjacent dies of the same type and/or of different types. An optional backside redistribution structure may be formed over a second side of the silicon wafer opposite the first redistribution layer. The optional backside redistribution structure may provide backside interconnects between functional dies of different types.

A display panel, a manufacturing method therefor, and a display device. The display panel comprising: a base substrate; a plurality of light emitting devices on the base substrate; an encapsulation layer on a side of the light emitting devices away from the base substrate, configured for encapsulating the plurality of light emitting devices; a photosensitive sensor on a side of the light emitting devices away from the encapsulation layer; a color film layer on a side of the encapsulation layer away from the base substrate, comprising a plurality of color film elements; and a light-shielding layer on a side of the encapsulation layer away from the base substrate, comprising a plurality of first openings and a plurality of second openings, the second openings each being filled with a filter element, and the second openings each being used for transmitting light reflected by a finger toward the photosensitive sensor.

The present disclosure provides a display panel and a display device. The display panel includes: a base substrate, on which a first metal layer and a second metal layer are stacked; and organic light emitting diode devices on a side, away from the base substrate, of the first metal layer. The first metal layer includes a power signal line. The power signal line is electrically connected with the second electrode layer in a peripheral area. Each organic light-emitting diode devices- includes a first electrode layer, a light emitting layer and a second electrode layer which are sequentially arranged on the base substrate. The second power signal line includes traces in a first direction and traces in a second direction, and orthographic projections of the traces in the first direction on the base substrate are intersected with orthographic projections of the traces in the second direction on the base substrate.