Various embodiments of systems and methods for calibrating wafer inspection system modules are disclosed herein. More specifically, the present disclosure provides various embodiments of systems and methods to calibrate the multiple spectral band values obtained from a substrate by a camera system included within a WIS module. In one embodiment, multiple spectral band values are red, green, and blue (RGB) values. As described in more detail below, the calibration methods disclosed herein may use a test wafer having a predetermined pattern of thickness changes or color changes to generate multiple spectral band offset values. The multiple spectral band offset values can be applied to the multiple spectral band values obtained from the substrate to generate calibrated RGB values, which compensate for spectral responsivity differences between camera systems included within a plurality of WIS modules.

A semiconductor package may include a base, a first chip on the base, and first connection patterns that connect and couple the base and the first chip. The first chip may include a substrate, pad patterns on the substrate, a passivation layer on the substrate and having openings, and pillars on the substrate, the pad patterns include a first signal pad and a second signal pad, the first connection patterns are in contact with the pillars, the pillars include a first signal pillar in contact with the first signal pad and a second signal pillar in contact with the second signal pad, the openings in the passivation layer include a first opening having a sidewall facing a side surface of the first signal pillar and surrounding the side surface of the first signal pillar, and a second opening having a sidewall facing a side surface of the second signal pillar and surrounding the side surface of the second signal pillar, and a maximum width of the second opening is greater than a maximum width of the first opening.

A substrate processing method includes performing a post-processing on a substrate subjected to a pre-processing, in the multiple chambers, acquiring a characteristic value of the substrate after the post-processing for respective chambers, calculating an actual value being an estimated value of the characteristic value when a processing condition of the post-processing is adjusted such that a difference between the characteristic value and a target value becomes small, acquiring a correction residual amount being a difference between the actual value and the target value for each chamber, calculating an average value of correction residual amounts of all of the chambers, correcting the pre-processing condition based on the average of the correction residual amounts, correcting the post-processing condition for each chamber based on the average of the correction residual amounts and the correction residual amount for each chamber; and performing the pre-processing and the post-processing based on the corrected conditions.

A method for evaluating an array of high aspect ratio (HAR) structures on a sample includes illuminating the sample with an x-ray beam along a first axis parallel to within two degrees to the HAR structures in the array and sensing a first pattern of small angle x-ray scattering (SAXS) scattered from the sample while illuminating the sample along the first axis. The sample is illuminated with the x-ray beam along a second axis that is oblique to the HAR structures in the array, and a second pattern of the SAXS scattered from the sample is sensed while illuminating the sample along the second axis. Information is extracted with respect to the HAR structures based on the first and second patterns.

In some embodiments, the present disclosure relates a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a workpiece holder apparatus that is configured to hold a workpiece. A sonar sensor is arranged over the workpiece holder apparatus. The sonar sensor includes an emitter that is configured to produce sound waves traveling towards the workpiece holder apparatus. The sonar sensor also includes a detector that is configured to receive reflected sound waves from the workpiece holder apparatus or an object between the sonar sensor and the workpiece holder apparatus. Further, sonar sensor control circuitry is coupled to the sonar sensor and is configured to determine if a workpiece is present on the workpiece holder apparatus based on a sonar intensity value of the reflected sound waves received by the detector of the sonar sensor.

One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

An object is to provide a measurement system or the like that enables selection of appropriate new measurement targets by performing measurement on a limited number of measurement points.

Proposed is a system including a measurement tool; and a computer system configured to communicate with the measurement tool, in which the computer system is configured to calculate, based on feature data of a plurality of locations on a wafer received from the measurement tool, an in-plane distribution of the feature data on the wafer (C), select, based on the calculated in-plane distribution, a new measurement point for acquiring the feature data (D), calculate, based on feature data acquired by measuring the selected new measurement point (B), a new in-plane distribution of the feature data on the wafer (F), and output at least one of the feature data of the new measurement point and the in-plane distribution which are acquired by executing the selection of the new measurement point and the calculation of the new in-plane distribution at least once (H).

A method includes placing a first wafer on a first wafer stage, placing a second wafer on a second wafer stage, and pushing a center portion of the first wafer to contact the second wafer. A bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer. When the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, a stage gap between the top wafer stage and the bottom wafer stage is reduced.

Embodiments of this invention provide a measurement map configuration method and apparatus. A wafer to be inspected is provided. The wafer includes a plurality of inspection marks. A first inspection result is obtained based on a first set of inspection marks. A second set of inspection marks is selected based on a preset rule. The second set of inspection marks is less than the first set of inspection marks. A second inspection result is obtained based on the second set of inspection marks. If an overlay accuracy of the second inspection result matches an overlay accuracy the first inspection result, a measurement map for the wafer is set based on target inspection marks. The target inspection marks are the second set of inspection marks of the measurement map.