An electronic device provided with a package housing a stacked structure formed by dies of semiconductor material, which have a respective integrated circuit and a respective top surface, which extends in a horizontal plane, and are stacked on one another in a vertical direction, transverse to the horizontal plane, and staggered parallel to the same horizontal plane. Provided at a first portion of the top surface is a first plurality of contact pads, and provided at a second portion of the top surface is a second plurality of contact pads. The first portion is covered by a overlying die, and the second portion is exposed and freely accessible. At least some of the contact pads of the first plurality are electrically coupled to internal through silicon vias traversing a substrate of the overlying die to put overlapping dies in electrical contact.

A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.

Provided is a monolithic stacked integrated circuit (IC). The IC includes a first layer over a substrate and a second layer over the first layer. The first layer includes first circuit elements where a first portion of the first circuit elements has a defect. The second layer includes second circuit elements. The IC further includes interconnect elements coupling the first portion to a second portion of the second circuit elements for mitigating the defect.

A driving back plate, a display panel, and a preparation method therefor. The driving back plate includes a plurality of pixel driving units. At least one of the pixel driving units includes a main electrode pair and at least one redundant electrode pair. A second electrode of the main electrode pair, a first electrode of the main electrode pair, a first electrode of a redundant electrode pair, and a second electrode of the redundant electrode pair are arranged sequentially in a first direction. At least one of the pixel driving units includes a connection line. The connection line includes a cutting portion. A signal on the connection line is configured to be input between the redundant electrode pair and the cutting portion.

A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, first sub-pixels and second sub-pixels. The first sub-pixels are disposed on the substrate. The first sub-pixels have a first orienting characteristic. A first adherent material is disposed between the first sub-pixels and the substrate. The second sub-pixels are disposed on the substrate. The second sub-pixels have a second orienting characteristic. A second adherent material is disposed between the second sub-pixels and the substrate. The first orienting characteristic and the second orienting characteristic are different. The first adherent material and the second adherent material are different.

Methods for manufacturing a display device are provided. A representative method includes: providing a thin film transistor (TFT) substrate having a plurality of sub-pixel locations and a plurality of TFTs corresponding to the plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs), wherein each of the plurality of LEDs has a first electrical contact and a second electrical contact; transferring the plurality of LEDs from the carrier substrate to the TFT substrate, with at least two of the plurality of LEDs being disposed at one of the plurality of sub-pixel locations; and fixing positions of the plurality of LEDs with respect to the TFT substrate. The method also may include: determining that a first LED of the plurality of LEDs is defective; and electrically isolating the first electrical contact of first LED from a first electrode of the display device.

An active matrix display where in one embodiment each cell comprises: a driving circuit for providing current to light emitting devices placed in the cell under the control of a data driver signal, a first light emitting device location connected to the driving circuit and a second light emitting device location connected in series to the first light emitting device location. A first thin-film transistor (TFT) is connected in parallel with the first light emitting device location and a second TFT is connected in parallel with the second light emitting device location, its gate node connected to the gate node of the first TFT. One terminal of a third TFT is connected to the gate nodes of the first and second TFTs and selectively connects a control signal to the first and second TFTs under the control of a scan driver signal. The control signal determines which of a first or second light emitting device placed in the cell emits light when the driving circuit provides current.

Various embodiments disclose a method for fabricating vertical transistors. In one embodiment, a structure is formed comprising at least a first substrate, an insulator layer on the substrate, a first doped layer on the insulator layer, at least one fin structure in contact with the doped layer, a dielectric layer surrounding a portion of the fin structure, a gate layer on the dielectric layer, a second doped layer in contact with the fin structure, a first contact area in contact with the second doped layer, and at least a first interconnect in contact with the first contact area. The structure is flipped bonded to a second substrate. The first substrate and the insulator layer are removed to expose the first doped layer. A second contact area is formed in contact with the first doped layer. At least a second interconnect is formed in contact with the second contact area.

A 3D structure, the structure including: a first stratum overlaid by a second stratum, the second stratum is less than two microns thick, where the first stratum includes an array of memory cells including at least four rows of memory cells, each of the rows is controlled by a bit-line, where the array of memory cells includes a plurality of columns of memory cells, each of the columns is controlled by a word-line, and where the second stratum includes memory control circuits directly connected to the bit-lines and the word-lines.

The present disclosure relates to a display apparatus including a substrate, a thin film transistor disposed on the substrate, a first insulating layer disposed on a source electrode and a drain electrode of the thin film transistor, a light emitting diode disposed on the first insulating layer to emit light toward the substrate, a second insulating layer disposed on the first insulating layer to surround the light emitting diode, an upper electrode disposed on the second insulating layer, and a driver IC chip disposed above the upper electrode to be connected to the upper electrode. According to the above configuration, the driver IC chip is disposed on the back side of a light emitting surface of a display panel, so that a bezel is capable of being minimized or omitted, and manufacturing of the display apparatus is easy and manufacturing costs is reduced.