Systems and methods for monitoring copper corrosion in an integrated circuit (IC) device are disclosed. A corrosion-sensitive structure formed in the IC device may include a p-type active region adjacent an n-type active region to define a p-n junction space charge region. A copper region formed over the silicon may be connected to both the p-region and n-region by respective contacts, to thereby define a short circuit. Light incident on the p-n junction space charge region, e.g., during a CMP process, creates a current flow through the metal region via the short circuit, which drives chemical reactions that cause corrosion in the copper region. Due to the short circuit configuration, the copper region is highly sensitive to corrosion. The corrosion-sensitive structure may be arranged with less corrosion-sensitive copper structures in the IC device, with the corrosion-sensitive structure used as a proxy to monitor for copper corrosion in the IC device.

Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.

An inspection device includes: a laser irradiation unit; an imaging unit; and a control unit. The control unit is configured to execute a processing process of controlling the laser irradiation unit according to a recipe set such that a plurality of modified regions are formed inside a wafer by irradiating the wafer with a laser beam and a full-cut state where cracks extending from the modified regions have reached a back surface and a surface is attained; an identification process of identifying a state of the crack on the back surface extending from the modified region, and a state of at least one of the modified regions and the cracks inside the wafer, based on a signal; and a determination process of determining whether or not a dicing force applied to the wafer according to the recipe is proper, based on information identified in the identification process.

An automatic detection method and an automatic detection system for detecting any crack on wafer edges are provided. The automatic detection method includes the following steps. Several wafer images of several wafers are obtained. The wafer images are integrated to create a templet image. Each of the wafer images is compared with the templet image to obtain a differential image. Each of the differential images is binarized. Each of the differential images which are binarized is de-noised. Whether each of the differential images has an edge crack is detected according to pattern of each of the differential images which are de-noised.

Systems and methods to achieve desired color accuracy, power consumption, and gamma correction in an array of pixels of a micro-LED display. The method and system provides an array of pixels, wherein each pixel comprising a plurality of sub-pixels arranged in a matrix and a driving circuitry configured to provide an individual emission control signal to each sub-pixel of each pixel in the array of pixels to independently control an emission time and a duty cycle of each sub-pixel.

There may be provided a method for inspecting a top redistribution layer conductors of an object. The top redistribution layer (RDL) is positioned above at least one lower RDL and above at least one other dielectric layer. The method may include (i) illuminating the object with radiation, the at least one lower dielectric layer significantly absorbs the radiation; (ii) generating, by a detector, detection signals that represent radiation reflected from the object, and (iii) processing, by a processor, the detection signal to provide information about the top RDL. The processing may include distinguishing detection signals related to the top RDL from detection signals related to the at least one lower RDL.

An electroluminescent light source is provided with an adjusted or adjustable luminance parameter wherein: the source includes a set of segments, each segment comprising a discrete electroluminescent element or multiple discrete electroluminescent elements connected permanently to one another and having an emission area; at least a portion of the segments has different emission areas; the source comprising means for controlling at least a portion of the segments.

A leakage laser beam detecting method includes a coating step of coating the lower surface of a wafer with an oil marker, thereafter, a press-bonding step of press-bonding an adhesive tape to the lower surface of the wafer, thereafter, a modified layer forming step of applying a laser beam having a wavelength that can be transmitted through the wafer to the wafer from the upper surface thereof while making the laser beam be focused at a focused point within the wafer thereby to form modified layers in the wafer, thereafter, a peeling step of peeling off the press-bonded adhesive tape, and a leakage laser beam detecting step of detecting areas of the lower surface where the oil marker has been removed when the press-bonded adhesive tape is peeled off as areas marked by leakage laser beams.

Manufacturing a device may include inspecting a surface of an inspection target device. The inspecting may include forming a metal layer on a surface of the inspection target device on which a minute pattern is formed, directing a beam of light to be incident and normal to the surface of the inspection target device, determining a spectrum of light reflected from the surface of the inspection target device, and generating, via the spectrum, information associated with a structural characteristic of the minute pattern formed on the inspection target device. The inspection target device may be selectively incorporated into the manufactured device based on the generated information.