An apparatus for inspecting light emitting elements, a method of inspecting light emitting elements using the apparatus, and a method of manufacturing display device using the apparatus are provided. The apparatus includes a flow path unit extending in one direction and including a flow path along which a solution in which light emitting elements are mixed moves, at least one alignment unit to which the flow path extends from at least a portion of the flow path unit, a packaging unit at an end of the flow path unit and in which the light emitting elements are stacked, and a plurality of alignment electrodes on an outer surface of the alignment unit.

Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.

Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

A method of detecting defects in a structure sample comprising a thin film layer and a sacrificial later is disclosed. The method comprises exposing the thin film layer to a vapour phase etchant, obtaining an image of the thin film layer and analysing the image. The vapour phase etchant enhances any defects present in the thin film layer by passing through the defect and etching a cavity within the sacrificial layer. The cavity undercuts the thin film layer resulting in a stress region surrounding the defect. Defects which were not originally detectable may be made detectable after exposure to the vapour phase etchant. A vapour phase etchant has the advantage of being highly mobile such that it can access defects that a liquid phase etchant might not. Furthermore, unlike a liquid phase etchant, a vapour phase etchant can be used to test a sample non-destructively.

Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=Σkx′.sub.i/area of sample, wherein 2≤k≤3, and x′.sub.i is the long-axis direction length of an etch pit caused by the i-th twin.

An automatic detection method and an automatic detection system for detecting any crack on wafer edges are provided. The automatic detection method includes the following steps. Several wafer images of several wafers are obtained. The wafer images are integrated to create a templet image. Each of the wafer images is compared with the templet image to obtain a differential image. Each of the differential images is binarized. Each of the differential images which are binarized is de-noised. Whether each of the differential images has an edge crack is detected according to pattern of each of the differential images which are de-noised.

In-situ defect count detection in post chemical mechanical polishing (post-CMP) is provided. Post-CMP is performed, in-situ and according to a recipe, on a surface of a semiconductor wafer within a post-CMP chamber. A light signal is scanned over a target area of the surface of the semiconductor wafer and a reflected light signal reflected from the target area is detected. A defect count of defects present in the target area is determined based on the reflected light signal reflected from the target area.

Systems and methods to achieve desired color accuracy, power consumption, and gamma correction in an array of pixels of a micro-LED display. The method and system provides an array of pixels, wherein each pixel comprising a plurality of sub-pixels arranged in a matrix and a driving circuitry configured to provide an individual emission control signal to each sub-pixel of each pixel in the array of pixels to independently control an emission time and a duty cycle of each sub-pixel.

A method for producing a layer structure for the production of thin-film solar cells including: providing a carrier substrate, depositing a rear electrode layer on the carrier substrate, producing a rear-electrode-layer-free region, creating a measurement layer over the rear electrode layer such that the measurement layer is situated at least over the rear-electrode-layer-free region, wherein the measurement layer is a photoactive absorber layer or a precursor layer of the photoactive absorber layer, and determining a quantity or a relative share of a component of the measurement layer in a region of the measurement layer that is situated over the rear-electrode-layer-free region of the rear electrode layer.

Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.