A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

A substrate processing apparatus includes a base with a process-side surface and a substrate support arranged on the process-side surface and designed to carry a substrate at its periphery. The periphery, more specifically the plane defined by the periphery, is spaced apart from the process-side surface. The substrate processing apparatus also includes a radiation sensor adapted to measure electromagnetic radiation arranged on a side of a back-side surface of the base. A radiation channel is arranged between the radiation sensor and the periphery of the substrate support, more specifically between the radiation sensor and the plane defined by the periphery, wherein the radiation channel is at least partially permeable to electromagnetic radiation.

A process of detecting a thickness of a film layer to be processed or a depth of etching by using a result of detection of a signal indicating intensity of interference light having a plurality of wavelengths formed at a plurality of time instants from when plasma is formed to when the etching is completed. A start time instant is detected by using an amount of change in the intensity of the interference light. Then, a remaining film thickness or the etching amount at an arbitrary time instant is detected from a result of comparing actual data indicating the intensity of the interference light at the arbitrary time instant during the processing after the start time instant with a plurality of pieces of data for detection of the intensity of the interference light obtained in advance and associated with values of a the film thicknesses or the depths of etching.

An advanced process control system including a first process tool, a second process tool, and a measurement tool is provided. The first processing tool is configured to process each of a plurality of wafers by one of a plurality of first masks, and provide a first process timing data. The second processing tool is configured to process the wafer processing by the first process tool by one of a plurality of second masks to provide a plurality of works. The second process tool provides a measurement trigger signal according to the first process timing data. The measuring tool is configured to determine whether to perform a measuring operation on each works in response to the measurement trigger signal, and correspondingly provide a measurement result.

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

A method of milling a sample that includes a first layer formed over a second layer, where the first and second layers are different materials, the method comprising: milling the region of the sample by scanning a focused ion beam over the region a plurality of iterations in which, for each iteration, the focused ion beam removes material from the sample generating byproducts from the milled region; detecting, during the milling, the partial pressures of one or more byproducts with a residual gas analyzer positioned to have a direct line of sight to the milled region; generating, in real-time, an output detection signal from the residual gas analyzer indicative of an amount of the one or more byproducts detected; and stopping the milling based on the output signal.

A system and method for thinning an integrated circuit (IC) wafer. The system includes a support structure to hold the IC wafer and a mechanism to operate on the IC wafer. The support structure includes one or more inductive coils configured to transmit a power signal to the IC wafer and receive a feedback signal from the IC wafer. The system further includes a process controller to control the operation based at least in part on the feedback signal received from the IC wafer.

A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).