A package structure, a packaging method and a semiconductor device are provided. The method includes: providing a semiconductor functional structure, an interconnecting layer disposed on a surface of the semiconductor functional structure; forming an isolation layer exposing part of the interconnecting layer, the exposed part of the interconnecting layer acting as a first pad, and the first pad used for performing a first type test; after completing the first type test, forming a redistribution layer on the first pad and the isolation layer, the redistribution layer and the interconnecting layer electrically connected; and forming a first insulating layer exposing parts of the redistribution layer, the exposed parts of the redistribution layer acting as a second pad and a third pad, the second pad used for performing a second type test, and the third pad used for executing a functional interaction corresponding to contents of the second type test.

The invention comprises a light emitting diode chip and a package substrate. The light emitting diode chip is provided with a semiconductor epitaxial structure, a lateral extending interface structure, a chip conductive structure, an N-type electrode located above the semiconductor epitaxial structure and a P-type bypass detection electrode located on the lateral extending interface structure. The chip conductive structure is provided with a P-type main electrode located on a lower side. The package substrate comprises a plurality of electrode contacts through which the N-type electrode, the P-type bypass detection electrode and the P-type main electrode are connected, and a process quality of a alternative substrate adhesive layer in one of the semiconductor epitaxial structure and the chip conductive structure and a chip-substrate bonding adhesive layer between the P-type main electrode and the package substrate is evaluated by detecting electrical characteristics.

A package substrate comprises first, second and third electrical test contacts, wherein the package substrate is provided with an upper element plane and a lower SMD electrode plane on two sides. The side edge of the upper element plane is provided with first and second electrodes of the main element and first and second electrodes of the secondary element. The main element of LED chip is electrically connected between the first and second electrodes of the main element, a parallel circuit secondary element is electrically connected between the first and second electrodes of the secondary element. The electrical characteristics of the main element of LED chip and the parallel circuit secondary element are measured through the first, second, and third electrical test contacts when electrically connected.

A test structure for a buried gate transistor includes a substrate, a first test contact located on one side of a first transistor contact, a second test contact located on one side of a second transistor contact, and a layer buried in the substrate, having a doping greater than or equal to 10.sup.18 cm.sup.−3, and having a face which is tangent to the buried part of the gate. A first insulation structure is disposed between the first test contact and the first transistor contact and a second insulation structure is disposed between the second test contact and the second transistor contact. The first and second test contacts each have an end connected to the buried layer.

A display device includes a substrate including a plurality of emission areas respectively corresponding to a plurality of subpixels for displaying an image, a plurality of light emitting elements respectively located in the plurality of emission areas of a first surface of the substrate and respectively corresponding to the plurality of subpixels, a first planarization layer on the first surface of the substrate and covering the plurality of light emitting elements, and an array layer on the first planarization layer.

A semiconductor chip is disclosed that includes a chip pad disposed in a first region of a chip body, a redistribution wiring test pad disposed in the first region of the chip body spaced apart from the chip pad and connected to the chip pad through a redistribution wiring structure, and a redistribution wiring connection pad disposed in the first region of the chip body or a second region of the chip body and connected to the chip pad through the redistribution wiring structure.

A wafer with a test structure includes a wafer with a front side and a back side. A first die, a second die, a third die and a scribe line are disposed on the wafer. The scribe line is positioned between the dice. The first die includes a first dielectric layer and a first metal connection disposed within and on the first dielectric layer. A test structure and a dielectric layer are disposed on the scribe line, wherein the test structure is on the dielectric layer. Two first trenches are respectively disposed between the first dielectric layer and the dielectric layer and disposed at one side of the dielectric layer. Two second trenches penetrate the wafer, and each of the two second trenches respectively connects to a corresponding one of the two first trenches. A grinding tape covers the front side of the wafer and contacts the test structure.

A semiconductor package includes a substrate including an upper pad at a top surface of the substrate, a semiconductor chip on the substrate and including a chip pad at a top surface of the semiconductor chip, a connecting structure on the semiconductor chip and including a connecting pad at a top surface of the connecting structure and electrically connected to the upper pad, an encapsulant covering the substrate, the semiconductor chip, and the connecting structure, and a test terminal on the connecting structure and extending through the encapsulant. The connecting structure electrically interconnects the semiconductor chip and the test terminal.

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

Bonded wafer device structures, such as a wafer-on-wafer (WoW) structures, and methods of fabricating bonded wafer device structures, including an array of contact pads formed in an interconnect level of at least one wafer of the bonded wafer device structure. The array of contact pads formed in an interconnect level of at least one wafer may have an array pattern that corresponds to an array pattern of contact pads that is subsequently formed over a surface of the bonded wafer structure. The array of contact pads formed in an interconnect level of at least one wafer of the bonded wafer device structure may enable improved testing of individual wafers, including circuit probe testing, prior to the wafer being stacked and bonded to one or more additional wafers to form a bonded wafer structure.