The present disclosure relates to a high voltage power electronics module for subsea applications. The power electronics module includes: a baseplate, a power semiconductor chip arranged on the baseplate, and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip, wherein the encapsulation structure is an epoxy having an elastic modulus less in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K.

The present disclosure relates to a high voltage power electronics module for subsea applications. The power electronics module includes: a baseplate, a power semiconductor chip arranged on the baseplate, and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip, wherein the encapsulation structure is an epoxy having an elastic modulus less in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K.

This hermetic sealing lid member (1) is made of a clad material (10) including a base material layer (11) made of an Fe alloy that contains 4 mass % or more of Cr and a silver brazing layer (13) bonded onto a surface of the base material layer on a side closer to an electronic component housing member through an intermediate layer (12).

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

Techniques regarding qubit chip assemblies are provided. For example, one or more embodiments described herein can include an apparatus that can comprise a qubit chip positioned on an interposer chip. The apparatus can also comprise an electrical connector in direct contact with the interposer chip. The electrical connector can establish an electrical communication between a wire and a contact pad of the interposer chip that is coupled to the qubit chip.

Techniques regarding qubit chip assemblies are provided. For example, one or more embodiments described herein can include an apparatus that can comprise a qubit chip positioned on an interposer chip. The apparatus can also comprise an electrical connector in direct contact with the interposer chip. The electrical connector can establish an electrical communication between a wire and a contact pad of the interposer chip that is coupled to the qubit chip.

This hermetic sealing lid member (10) is made of a clad material (20) including a silver brazing layer (21) that contains Ag and Cu and a first Fe layer (22) bonded onto the silver brazing layer and made of Fe or an Fe alloy. The hermetic sealing lid member is formed in a box shape including a recess portion (13) by bending the clad material.

A semiconductor device, including a case that has a first power terminal including a first bonding area and a second power terminal including a second bonding area, and an insulating unit located between the first power terminal and the second power terminal, and having a shape of a flat plate, the insulating unit being bonded to the case. The insulating unit has a first insulating portion in a sheet form, and a second insulating portion which covers an upper surface, a lower surface, or both the upper and lower surfaces, of the first insulating portion. The first bonding area and the second bonding area are exposed from the insulating unit and from the case.

A semiconductor device, including a case that has a first power terminal including a first bonding area and a second power terminal including a second bonding area, and an insulating unit located between the first power terminal and the second power terminal, and having a shape of a flat plate, the insulating unit being bonded to the case. The insulating unit has a first insulating portion in a sheet form, and a second insulating portion which covers an upper surface, a lower surface, or both the upper and lower surfaces, of the first insulating portion. The first bonding area and the second bonding area are exposed from the insulating unit and from the case.