A leadframe for semiconductor devices, the leadframe comprising a die pad portion having a first planar die-mounting surface and a second planar surface opposed the first surface, the first surface and the second surface having facing peripheral rims jointly defining a peripheral outline of the die pad wherein the die pad comprises at least one package molding compound receiving cavity opening at the periphery of said first planar surface.

A semiconductor package includes: a first redistribution layer; a first semiconductor chip including a first side and a second side, wherein the first side faces the first redistribution layer; a first sealing material covering the second side of the first semiconductor chip and having a first filler content; a second sealing material formed on the first sealing material and having a second filler content lower than the first filler content; and a second redistribution layer disposed on the second sealing material.

A semiconductor memory device includes first memory dies stacked one upon another and electrically connected one to another by first bond wires, and covered with a first encapsulant. Second memory dies are disposed above the first memory dies, stacked one upon another and electrically connected one to another with second bond wires, and covered with a second encapsulant. A control die may be mounted on the top die in the second die stack. Vertical bond wires extend between the stacked die modules. A redistribution layer is formed over the top die stack and the control die to allow for electrical communication with the memory device. The memory device allows for stacking memory dies in a manner that allows for increased memory capacity without increasing the package form factor.

A semiconductor memory device includes first memory dies stacked one upon another and electrically connected one to another by first bond wires, and covered with a first encapsulant. Second memory dies are disposed above the first memory dies, stacked one upon another and electrically connected one to another with second bond wires, and covered with a second encapsulant. A control die may be mounted on the top die in the second die stack. Vertical bond wires extend between the stacked die modules. A redistribution layer is formed over the top die stack and the control die to allow for electrical communication with the memory device. The memory device allows for stacking memory dies in a manner that allows for increased memory capacity without increasing the package form factor.

A semiconductor structure includes a Through Silicon Via (TSV) and a protective ring disposed outside the TSV; the protective ring includes at least two protective layers arranged in parallel and surrounding the TSV; each of the protective layers includes a first protective structure and second protective structures disposed surrounding the first protective structure; the first protective structure is a polygonal structure; a number of sides of the polygonal structure is greater than or equal to 4; and the second protective structures are disposed on an inner side and an outer side of each corner area of the polygonal structure.

A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.

A bonded assembly of a first wafer including a first semiconductor substrate and a second wafer including a second semiconductor substrate may be formed. The second semiconductor substrate may be thinned to a first thickness, and an inter-wafer moat trench may be formed at a periphery of the bonded assembly. A protective material layer may be formed in the inter-wafer moat trench and over the backside surface of the second semiconductor substrate. A peripheral portion of the second semiconductor substrate located outside the inter-wafer moat trench may be removed, and a cylindrical portion of the protective material layer laterally surrounds a remaining portion of the bonded assembly. The second semiconductor substrate may be thinned to a second thickness by performing at least one thinning process while the cylindrical portion of the protective material layer protects the remaining portion of the bonded assembly.

A semiconductor package includes a semiconductor die including circuitry electrically coupled to bond pads that is mounted onto a leadframe. The leadframe includes a plurality of leads and a dam bar having a transverse portion that extends between adjoining ones of the leads. The bond pads are electrically connected to the plurality of leads. A raised dam pattern is on the dam bar or on an edge of an exposed portion of a top side clip of the semiconductor package that is positioned above and connects to the semiconductor die. The raised dam pattern includes a first material that is different relative to the material of the dam bar or the clip. A mold material encapsulates the semiconductor die.

A semiconductor package includes; laterally stacked semiconductor blocks disposed side by side in a first horizontal direction on a redistribution structure, wherein each semiconductor block among the laterally stacked semiconductor blocks includes laterally stacked semiconductor chips, a heat dissipation plate, and a first molding member on the laterally stacked semiconductor chips.

A foil-based package and a method for manufacturing a foil-based package includes, among other things, a first and a second foil substrate. An electronic component is arranged between the two foil substrates in a sandwich-like manner. Due to the component thickness, there is a distance difference between the two foil substrates between the mounting area of the component and ears outside of the mounting area. The foil-based package and the method provides means for reducing and/or compensating a distance difference between the first foil substrate and the second foil substrate caused by the component thickness.