This description relates generally to semiconductor devices and processes. A method for forming a packaged semiconductor package can include attaching a front side of a metal layer to a die pad of a leadframe that includes conductive terminals, so a periphery portion of the metal layer extends beyond a periphery pad surface of the die pad, and a portion of a half-etched cavity on the front side of the metal layer is located near the periphery pad surface of the die pad. The method further includes attaching a semiconductor device to the die pad and encapsulating the semiconductor device, the front side of the metal layer, a portion of a back side of the metal layer, and a portion of the conductive terminals to form a packaged semiconductor device.

A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame. In this way, the flow velocity of the molding resin raw material flowing to the control wire is reduced.

A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.

A semiconductor package includes a semiconductor die and an encapsulant layer. A mark is formed on a surface of the encapsulant layer. A damage barrier layer is disposed between the mark and the semiconductor die. The damage barrier layer blocks the propagation of laser light used to form the mark from reaching the semiconductor die.

A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

A semiconductor device includes a substrate, a conductive part, a controller module and a sealing resin. The substrate has a substrate obverse surface and a substrate reverse surface facing away from each other in a z direction. The conductive part is made of an electrically conductive material on the substrate obverse surface. The controller module is disposed on the substrate obverse surface and electrically connected to the conductive part. The sealing resin covers the controller module and at least a portion of the substrate. The conductive part includes an overlapping wiring trace having an overlapping portion overlapping with the electronic component as viewed in the z direction. The overlapping portion of the overlapping wiring trace is not electrically bonded to the controller module.

An electronic component comprising a plastic package and an electric chip which is inside the package. The electronic component comprises a metallic die pad and a metallic first support structure extends from the die pad to a first support point on one of the side surfaces of the plastic package. The electronic component also comprises a metallic opposing pad and a metallic second support structure which extends from the opposing pad to a second support point on one of the side surfaces of the plastic package.

A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.

A semiconductor package includes a logic die surrounded by a molding compound; a memory die disposed in proximity to the logic die; a plurality of vias around the logic die for electrically connecting the logic die to the memory die. Each of the plurality of vias has an oval shape or a rectangular shape when viewed from above. The vias have a horizontal pitch along a first direction and a vertical pitch along a second direction. The vertical pitch is greater than the horizontal pitch.

A package structure includes first/second/third package components, a thermal interface material (TIM) structure overlying the first package component opposite to the second package component, and a heat dissipating component disposed on the third package component and thermally coupled to the first package component through the TIM structure. The first package component includes semiconductor dies and an insulating encapsulation encapsulating the semiconductor dies, the second package component is interposed between the first and third package components, and the semiconductor dies are electrically coupled to the third package component via the second package component. The TIM structure includes a dielectric dam and thermally conductive members including a conductive material, disposed within areas confined by the dielectric dam, and overlying the semiconductor dies. A manufacturing method of a package structure is also provided.