A chip may include a first substantially planar isolation layer with a first surface and a second surface opposite the first surface. The chip may include a first substantially planar conduction layer with a first surface positioned adjacent to the second surface of the first isolation layer and a second surface opposite the first surface. The chip may include a second substantially planar isolation layer with a first surface positioned adjacent to the second surface of the first conduction layer and a second surface opposite the first surface. The chip may include a second conduction layer etched on the second surface of the second isolation layer. The second conduction layer may include an anode trace, a cathode trace, and an optical transmitter positioned on the cathode trace. The chip may include one or more vias through the second isolation layer electrically coupling the anode trace with the first conduction layer.

An on-chip microwave filter circuit includes a substrate formed of a first material that exhibits at least a threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The filter circuit further includes a dispersive component configured to filter a plurality of frequencies in an input signal, the dispersive component including a first transmission line disposed on the substrate, the first transmission line being formed of a second material that exhibits at least a second threshold level of thermal conductivity, where the second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The dispersive component further includes a second transmission line disposed on the substrate, the second transmission line being formed of the second material.

A device that includes a substrate including a plurality of metal layers, and a plurality of dielectric layers. The device further includes a first passive component including a first terminal, a second terminal, and a first body, mounted to the substrate on one of the plurality of metal layers. The first terminal is coupled to a first ground signal and the second terminal is coupled to a second ground signal such that the first passive component is shorted. The first passive component may be an inductor, a capacitor or a resistor. The first passive component is operable as a heat sink, a heat shield, an electromagnetic shield, or as a tuning inductor.

Memory devices might include an array of memory cells, a plurality of access lines, and a heater. The array of memory cells might include a plurality of strings of series-connected memory cells. Each access line of the plurality of access lines might be connected to a control gate of a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells. The heater might be adjacent to an end of each access line of the plurality of access lines.

A memory device includes at least one die and a heater device. The heater device includes a first switch element electrically connected to a power supply connection and the at least one die, a second switch element electrically connected to the first switch element, and a resistive element electrically connected to the second switch element and a ground connection. A method includes configuring the first switching element of the heater device to electrically connect the second switching element of the heater device to a power supply connection, configuring the second switching element to electrically connect one of a first resistor or a second resistor of the resistive element to the first switching element, and applying an voltage across the first resistor or the second resistor that is electrically connected to the first switching element.

A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Apparatus and methods are provided for managing operations of a semiconductor chip. In an exemplary embodiment, there is provided a semiconductor chip that may comprise a temperature sensor, a thermal heater, a processor and thermal control logic. The thermal control logic may be configured to: determine that a first temperature read-out from the temperature sensor reaches a first temperature threshold value, turn on the thermal heater, determine that a second temperature read-out from the temperature sensor reaches a second temperature threshold value that is lower than the first temperature threshold value, suspend functions of the processor, determine that a third temperature read-out from the temperature sensor reaches the first temperature threshold value, resume the functions of the processor, determine that a fourth temperature read-out from the temperature sensor reaches a third temperature threshold value that is higher than the first temperature threshold value and turn off the thermal heater.

The present invention provides a chip carrier structure including: a non-circuit substrate, a plurality of micro heaters, and an adhesive layer. The micro heaters are disposed on the non-circuit substrate. The adhesive layer is disposed on the micro heaters, and a plurality of chips are disposed on the adhesive layer. Thereby, the present invention improves the solder yield of the process by a wafer carrying structure and a wafer carrying device.

A chip-transferring system and a chip-transferring method are provided. The chip-transferring method includes: providing a chip carrying structure carrying an electronic chip; providing a circuit substrate, wherein a soldering material is configured between the electronic chip and the circuit substrate; providing a pin structure, wherein the electronic chip is transferred from the chip carrying structure to the circuit substrate through thrust of the pin structure; approaching a conductive coil structure of an eddy current generating module toward the soldering material , so that the soldering material is heated and cured indirectly through an eddy current generated by the conductive coil structure.

The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.