A display device and an electronic device are provided. The display device includes: a display screen; an electrically heated glass layer stacked onto the display screen, which includes a first transparent glass layer and a transparent conductive film layer, the transparent conductive film layer and the first transparent glass layer being stacked onto the display screen; a thermistor disposed adjacent to the display screen, for detecting a temperature of the display screen or a temperature at a position adjacent to the display screen; and a flexible circuit board, wherein an electrical connection terminal is provided on the transparent conductive film layer, the electrical connection terminal is electrically connected with the flexible circuit board, and the thermistor is electrically connected with the flexible circuit board.

A chip structure is provided. The chip structure includes: a first lower chip structure; and an upper chip structure on the first lower chip structure and having a pixel array region. The first lower chip structure includes: a first lower semiconductor substrate having a first side and a second side opposing each other; a first portion on the first side of the first lower semiconductor substrate; and a second portion on the second side of the first lower semiconductor substrate, the first portion of the first lower chip structure includes a gate wiring, the second portion of the first lower chip structure includes a second side wiring and a heating element, and the heating element is on the same plane as that of the second side wiring and has a length greater than that of the second side wiring.

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first resistive element and a second resistive element over the semiconductor substrate. The semiconductor device structure also includes a first conductive feature electrically connected to the first resistive element and a second conductive feature electrically connected to the second resistive element. The semiconductor device structure further includes a dielectric layer surrounding the first conductive feature and the second conductive feature.

An interposer board having heating function and an electronic device using the same are provided. The interposer board includes an insulating body, a plurality of top conductive contacts, a plurality of bottom conductive contacts, a plurality of conductive connection structures and a plurality of micro heaters. The top conductive contacts are disposed on the insulating body. The bottom conductive contacts are disposed on the insulating body. The conductive connection structures are disposed on the insulating body, and the conductive connection structures respectively electrically connected to the top conductive contacts and respectively electrically connected to the bottom conductive contacts. The micro heaters are disposed on or in the insulating body, and the micro heaters are respectively adjacent to the top conductive contacts and the bottom conductive contacts. Each of the top conductive contacts or each of the bottom conductive contacts can be heated by the corresponding micro heater.

A vibration device has a substrate including a first surface and a second surface located on an opposite side to the first surface, a heater provided on the first surface side of the substrate, a temperature sensor provided on the first surface side of the substrate, a vibration element disposed on the first surface side of the substrate, a lid including a third surface joined on the first surface side and a fourth surface located on an opposite side to the third surface, and a circuit provided on one of the first surface, the second surface and the fourth surface, and including a temperature control circuit configured to control the heater based on an output of the temperature sensor.

An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.

A radio frequency (RF) device includes a phase-change material (PCM) situated over a sheet of thermally conductive and electrically insulating material, a heating element situated under the sheet of thermally conductive and electrically insulating material, and an input/output terminal situated over the PCM. The heating element is situated in a dielectric. A heat spreader is situated under the dielectric and over a substrate. Metal interconnect layers can be situated under and/or over the PCM, with the substrate situated below the metal interconnect layers.

A non-conductive film having heating function and an electronic device using the same are provided. The electronic device includes a circuit substrate, an interposer board disposed on the circuit substrate, at least one electronic chip carried by the interposer board, a first non-conductive film disposed between the interposer board and the circuit substrate, and a second non-conductive film disposed between the at least one electronic chip and the interposer board, the at least one electronic chip being electrically connected to the circuit substrate through the interposer board. One of the first non-conductive film and the second non-conductive film is a type of non-conductive film having heating function, and the non-conductive film with heating function includes a non-conductive body and a plurality of micro heaters. The shape of the non-conductive body is changeable by heating, and the micro heaters are disposed on or in the non-conductive body.

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

The present application provides a microdroplet container and a method for manufacturing the same, a method for spreading microdroplets, a microdroplet-generating kit, a temperature-controlling device, an oil phase composition for microdroplet generating and a method for treating the same.