Methods, apparatuses, and computer program products are disclosed for providing a multiphase pumping mechanism configured for multiphase cooling of electrical charging circuitry. In the context of an apparatus, the apparatus includes a thermoelectric cooling device having first and second opposed surfaces and a fluid circulation path having first and second branches in thermal communication with the first and second surfaces, respectively, of the thermoelectric cooling device. The fluid circulation path is configured to control flow of fluid therethrough such that the fluid alternately flows through the first and second branches. The first branch of the fluid circulation path is also configured to be in a thermal communication with at least one first component of a mobile electronic device in order to absorb heat and correspondingly cool the at least one first component of the mobile electronic device.

A chip mounting structure and a chip mounting device are provided. The chip mounting structure includes a circuit substrate and a plurality of micro heaters. The circuit substrate has a plurality of solder pads. A plurality of micro heaters are disposed on the circuit substrate adjacent to the solder pad. The plurality of chips are disposed on the circuit substrate, and the chip is electrically connected to the solder pad by a solder ball. Therefore, the soldering yield of the process can be reduced by the chip mounting structure and the chip mounting device.

A film structure, a chip carrier assembly, and a chip carrier device are provided. The film structure includes a film and a plurality of micro-heaters. In which, the film is applied on a substrate, and the plurality of micro-heaters is disposed on top of the film or in the film. The chip carrier assembly includes a circuit substrate and the film structure. In which, the circuit substrate carries a plurality of chips. The chip carrier device includes the chip carrier assembly and a suction unit. In which, the suction unit is arranged above the chip carrier assembly to attach on and transfer the plurality of chips to the circuit substrate. The chips are disposed on the circuit substrate through solder balls, and the micro-heaters heat the solder balls that are in contact with the chips.

The present invention is notably directed to an optical device (1) comprising a layer structure (2) with: a thermally conducting, optical reflector (15); a thermally conducting spacer (14), which is transmissive to light and arranged above the reflector (15); and a phase change material (10), or PCM, arranged above the spacer (14) and having at least two reversibly switchable states, in which the PCM exhibits two different values of refractive index. The reflector (15), the spacer (14) and the PCM (10) are successively stacked along a stacking direction (z) of the layer structure. The optical device further comprises: a heating element (17), opposite to the PCM (10) with respect to the reflector (15), the layer structure (2) being configured so as to electrically insulate the PCM (10) from the heating element (17), while the heating element (17) is in thermal communication with the PCM (10) via the reflector (15) and the spacer (14); and a controller (19, 19a) configured to energize the heating element (17), so as to heat the PCM (10) and thereby reversibly change a refractive index and/or an absorption of said PCM (10). The invention is further directed to related optical devices (notably devices comprising one or more pixels formed, each, by a set of layer structures such as described above) and actuation methods.

An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

A structure includes a first substrate and a second substrate. The second substrate includes a device region, and a peripheral region that laterally surrounds the device region. An insulating layer is between the first substrate and the second substrate. An opening laterally surrounds the device region and separates the device region from the peripheral region. The opening extends into the second substrate. An electrical device is in the device region, and a conductive track is in electrical communication with the electrical device. The conductive track is positioned in the opening and the peripheral region.

According to an embodiment, a thermocompression device for thermally compressing a semiconductor light emitting element array onto a wiring board may comprise: a lower head that supports the wiring board; an upper head that moves a donor including the semiconductor light emitting element array, and presses the semiconductor light emitting element array against a first region of the wiring board; a heating unit that heats at least one among the lower head and the upper head; a suction groove provided along an edge of the first region on the upper surface of the lower head; and a suctioning unit that communicates with the suction groove to suction the wiring board.

A semiconductor device assembly including a shape-memory element connected to at least one component of the semiconductor device assembly. The shape-memory element may be temperature activated or electrically activated. The shape-memory element is configured to move to reduce, minimize, or modify a warpage of a component of the assembly by moving to an initial shape. The shape-memory element may be applied to a surface of a component of the semiconductor device assembly or may be positioned within a component of the semiconductor device assembly such as a layer. The shape-memory element may be connected between two components of the semiconductor device assembly. A plurality of shape-memory elements may be used to reduce, minimize, and/or modify warpage of one or more components of a semiconductor device assembly.

Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC package support may include: a first conductive structure; a second conductive structure; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a positive temperature coefficient material.

A 3D flash memory module chip includes a memory chip and a control chip. The memory chip includes a plurality of tiles and a plurality of heaters. The tiles each include a plurality of 3D flash memory structures. The heaters are disposed around the 3D flash memory structures of each of the tiles. The control chip is bonded with the memory chip to drive at least one of the heaters.