The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.

Embodiments may relate to a microelectronic package that includes a lid coupled with a package substrate such that a die is positioned between the lid and the package substrate. The lid may include a heating element that is to heat an area between the lid and the die. Other embodiments may be described or claimed.

A method of manufacturing a low program voltage flash memory cell with an embedded heater in the control gate creates, on a common device substrate, a conventional flash memory cell in a conventional flash memory area (CFMA), and a neuromorphic computing memory cell in a neuromorphic computing memory area (NCMA). The method comprises providing a flash memory stack in both the CFMA and the NCMA, depositing a heater on top of the flash memory stack in the NCMA without depositing a heater on top of the flash memory stack in the CFMA.

Embodiments herein relate to systems, apparatuses, or processes for coupling or decoupling two substrates by heating pins on one of the substrates and either inserting or withdrawing the heated pins from solder elements on a BGA. In particular, by heating a plurality of pins on a first side of a first substrate, where the plurality of pins are substantially perpendicular to a plane of the substrate, inserting the heated plurality of pins into BGA attached to a second substrate where the BGA includes a plurality of solder elements aligned with the plurality of pins and where the heated plurality of pins melt the plurality of solder elements upon insertion. The inserted plurality of pins physically and/or electrically couple the first substrate and the second substrate.

Provided herein include various examples of an apparatus, a sensor system and examples of a method for manufacturing aspects of an apparatus, a sensor system. The apparatus may include a die. The apparatus may also include a substrate comprising a cavity. The die may be oriented in a portion of the cavity in the substrate, where the orientation defines a first space in the cavity adjacent to a first edge of the upper surface of the die and a second space in the cavity adjacent to the second edge of the upper surface of the die. The apparatus may further include fluidics fan-out regions comprising a first cured material deposited in the first space and the second space, a surface of the fluidics fan-out regions being contiguous with the upper surface of the die.

Examples include a computing system including a heater element for heating a processor device installed in the computing system. The computing system includes a chassis, a circuit board assembly housed in the chassis and a heat sink assembly disposed on the chassis to form a cover of the chassis. The circuit board assembly includes a processor package including a substrate having a first portion and a second portion. The processor package includes the processor device disposed on the first portion of the substrate. The heater element disposed on the second portion of the substrate. In the computing system, the heat sink assembly is disposed on the chassis such that a gap separates the heat sink assembly and the heater element.

A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device, The at least one heating element is located at a periphery of the intrinsic semiconductor area, The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

The present invention provides a chip packaging method, which includes: providing a base material, which includes plural finger contacts; disposing plural chips on the base material by flip chip mounting technology, and disposing plural vertical heat conducting elements surrounding each of the chips to connect the finger contacts on the base material; providing a packaging material to encapsulate the base material, the chips, and the vertical heat conducting elements; adhering a metal film on the packaging material via an adhesive layer, to form a package structure; and cutting the package structure into plural chip package units, wherein each of the chip package units includes one of the chips, a portion of the base material, a portion of the metal film, and a portion of the vertical heat conducting elements surrounding the chip.

The present invention concerns a heating assembly (10, 15) for generating heat in order to carry out temperature-dependent tests on an electronic component (3, 200) arranged inside a socket (2), the heating assembly (10, 15) comprising: A heating device (10) comprising an electrically conductive material (25) in such a manner as to allow the passage of an electrical current to produce heat. According to the invention, the assembly further comprises: A covering (15) of a thermally insulating material suitable for containing said heating device (10) inside, the covering having at least one opening at one side for allowing the heat diffusion through said opening; Fastening means for fastening said covering (15) to a support surface (5B), in such a manner that, while used, the heating device (10), arranged inside said covering (15), faces said support surface (5B) through said opening.

A humidity detecting device includes a semiconductor substrate including at least one impurity diffusion layer, a heating unit formed by the at least one impurity diffusion layer, and a humidity detecting unit. The humidity detecting unit includes a plurality of insulating films laminated on the semiconductor substrate, a lower electrode disposed over the heating unit via a first insulating film among the insulating films, a humidity sensitive film disposed on a second insulating film among the insulating films, so as to cover the lower electrode, and an upper electrode disposed on the humidity sensitive film.