Patent classifications
H01L23/36
THERMAL INTERFACE MATERIAL DETECTION THROUGH AN ELECTRICAL CONDUCTIVITY TEST
An apparatus for thermal interface material detection includes a heat dissipating device stack up that includes a heat dissipating device, a thermal interface material, a heat generating component, and a printed circuit board. The heat dissipating device is disposed on the thermal interface material, the thermal interface material is disposed on the heat generating component, and the heat generating component is disposed on the printed circuit board. A channel in a body of the heat dissipating device includes an embedded conductive probe, where a first end of the embedded conductive probe leads to a lower surface of the body of the heat dissipating device and a second end of the embedded conductive probe leads to an upper surface of the body of the heat dissipating device.
Power Semiconductor Module with Accessible Metal Clips
A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.
POWER SEMICONDUCTOR COOLING ASSEMBLY
A power switch module includes a semiconductor die and a conductive busbar. The semiconductor die is electrically conductively mounted to the busbar. The module also includes a dielectric coolant fluid and the busbar and the semiconductor die mounted thereto are immersed in the dielectric coolant fluid.
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
In this semiconductor device, an emitter electrode of a power semiconductor element includes a first sub-electrode provided in a region including a central portion of a front surface of a semiconductor substrate and a second sub-electrode provided in a region not including the central portion of the front surface of the semiconductor substrate. A first bonding wire connects the first sub-electrode and an emitter terminal. A second bonding wire connects the second sub-electrode and the emitter terminal. First and second voltage detectors detect voltages between the emitter terminal and the first and second sub-electrodes, respectively. It is possible to separately detect degradation of both the first bonding wire that degrades in an early period and the second bonding wire that degrades in a terminal period.
SEMICONDUCTOR PACKAGE ASSEMBLY
A semiconductor assembly package is provided. The semiconductor package assembly includes a system-on-chip (SOC) package, a memory package and a heat spreader. The SOC package includes a logic die and a first substrate. The logic die has pads on it. The first substrate is electrically connected to the logic die by the pads. The memory package includes a second substrate and a memory die. The second substrate has a top surface and a bottom surface. The memory die is mounted on the top surface of the second substrate and is electrically connected to the second substrate using bonding wires. The heat spreader is disposed between the SOC package and the memory package, wherein the heat spreader is in contact with a back surface of the logic die away from the pads.
Circuit modules with front-side interposer terminals and through-module thermal dissipation structures
A circuit module (e.g., an amplifier module) includes a module substrate, a thermal dissipation structure, a semiconductor die, encapsulant material, and an interposer. The module substrate has a mounting surface and a plurality of conductive pads at the mounting surface. The thermal dissipation structure extends through the module substrate, and a surface of the thermal dissipation structure is exposed at the mounting surface of the module substrate. The semiconductor die is coupled to the surface of the thermal dissipation structure. The encapsulant material covers the mounting surface of the module substrate and the semiconductor die, and a surface of the encapsulant material defines a contact surface of the circuit module. The interposer is embedded within the encapsulant material. The interposer includes a conductive terminal with a proximal end coupled to a conductive pad of the module substrate, and a distal end exposed at the contact surface of the circuit module.
Wiring substrate, electronic device and electronic module
A wiring substrate includes: an insulating substrate including a base portion comprising a through hole having a first opening and a second opening, and a frame portion located on the base portion; and a heat dissipator disposed on a side of the base portion that is opposite to the frame portion so as to block the second opening, wherein an inner surface of the through hole faces a side surface of the heat dissipator with a clearance being provided between the inner surface of the through hole and the side surface of the heat dissipator.
Power semiconductor module with adhesive filled tapered portion
Provided is a power semiconductor module that can secure insulating properties. A semiconductor element is mounted on a resin-insulated base plate including a circuit pattern, a resin insulating layer, and a base plate. A case enclosing the resin-insulated base plate is bonded to the resin insulating layer with an adhesive. The resin insulating layer and the case are bonded together with a region enclosed by the resin insulating layer and a tapered portion of the case formed closer to the resin insulating layer being filled with the adhesive made of a material identical to that of the sealing resin. Air bubbles in the adhesive appear in the tapered portion opposite to the resin insulating layer.
Semiconductor package
A semiconductor package includes a package substrate including an insulating layer having an upper surface and a lower surface and provided with a first region which is recessed to a first depth from the upper surface toward the lower surface, a redistribution wiring buried in the insulating layer, a chip connection pad on a bottom surface of the recessed first region and connected to the redistribution wiring, and a wire connection pad on the upper surface of the insulating layer and connected to the redistribution wiring, a first semiconductor chip overlapping, in a top-down view of the semiconductor package, the recessed first region of the insulating layer and comprising a first chip pad connected to the chip connection pad of the package substrate, and a second semiconductor chip on the first semiconductor chip and connected to the wire connection pad of the package substrate through a conductive wire.
PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE WHICH INCLUDE MULTI-LAYERED PHOTOSENSITIVE INSULATING LAYER, AND METHOD OF MANUFACTURING THE SAME
A printed circuit board may include a substrate body portion, conductive patterns on a top surface of the substrate body portion, and a photosensitive insulating layer on the top surface of the substrate body portion and including an opening exposing at least one of the conductive patterns. The photosensitive insulating layer includes first to third sub-layers stacked sequentially. The first sub-layer includes an amine compound or an amide compound A refractive index of the second sub-layer is lower than a refractive index of the third sub-layer. A photosensitizer content of the second sub-layer is higher than a photosensitizer content of the third sub-layer.