A semiconductor package includes a redistribution substrate including a first redistribution layer; a semiconductor chip having a connection pad connected to the first redistribution layer; a vertical connection conductor electrically connected to the connection pad by the first redistribution layer; a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor; an encapsulant filling the first and second through-holes; and a redistribution member including a second redistribution layer. The vertical connection conductor and the core member include a same material. A width of a lower surface of the vertical connection conductor is wider than that of an upper surface thereof, a width of a lower end of the first through-hole is narrower than that of an upper end thereof, and a width of a lower end of the second through-hole is narrower than that of an upper end thereof.

A module includes a substrate, which has a polygonal shape in a plan view, an electronic component and an electronic component, which are mounted on a main surface of the substrate, and side electrodes, which are provided on at least two side surfaces of a plurality of side surfaces that form the polygonal shape of the substrate. A conductor film coupled to the electronic component and a conductor film coupled to the electronic component are provided on the substrate. The conductor film extends to reach a side surface of the at least two side surfaces to be coupled to a side electrode provided on the side surface. The conductor film extends to reach a side surface of the at least two side surfaces, which is different from the side surface, to be coupled to a side electrode provided on the side surface.

A bonding structure includes: a plurality of carbon nanotubes; a first bonded member, and a first metal sintered compact bonding first end portions of the plurality of carbon nanotubes and the first bonded member, wherein the first metal sintered compact enters spaces between the first end portions of the plurality of carbon nanotubes, and bonds to the plurality of carbon nanotubes while covering side faces and end faces of the first end portions of the plurality of carbon nanotubes.

A method of producing a resin sheet, including: mixing blocky boron nitride particles A, blocky boron nitride particles B, and a resin composition, and molding the resin composition to a sheet form and pressurizing the sheet form resin composition, the boron nitride primary particles a having a length in a shorter direction of 0.7 μm or less, the boron nitride primary particles b having a length in a shorter direction of 1 μm or more, the blocky boron nitride particles A having an average particle diameter of 30 μm or more, the blocky boron nitride particles B having an average particle diameter that is smaller than the average particle diameter of the blocky boron nitride particles A, the compressive strengths ratio of the blocky boron nitride particles A to the blocky boron nitride particles B being 1.2 or more. Thus, the thermal conductivity of a resin sheet can be enhanced.

A method of producing a resin sheet, including: mixing blocky boron nitride particles A, blocky boron nitride particles B, and a resin composition, and molding the resin composition to a sheet form and pressurizing the sheet form resin composition, the boron nitride primary particles a having a length in a shorter direction of 0.7 μm or less, the boron nitride primary particles b having a length in a shorter direction of 1 μm or more, the blocky boron nitride particles A having an average particle diameter of 30 μm or more, the blocky boron nitride particles B having an average particle diameter that is smaller than the average particle diameter of the blocky boron nitride particles A, the compressive strengths ratio of the blocky boron nitride particles A to the blocky boron nitride particles B being 1.2 or more. Thus, the thermal conductivity of a resin sheet can be enhanced.

The present disclosure relates to a radio frequency (RF) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes an isolation portion, a back-end-of-line (BEOL) portion, and a front-end-of-line (FEOL) portion with a contact layer and an active section. The contact layer resides over the BEOL portion, the active section resides over the contact layer, and the isolation portion resides over the contact layer to encapsulate the active section. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the isolation portion of the thinned device die.

An electronic package is provided, in which a first electronic element and a second electronic element are disposed on a first side of a circuit structure and a second side of the circuit structure, respectively, where a first metal layer is formed between the first side of the circuit structure and the first electronic element, a second metal layer is formed on a surface of the second electronic element, and at least one thermally conductive pillar is disposed on the second side of the circuit structure and extends into the circuit structure to thermally conduct the first metal layer and the second metal layer. Therefore, through the thermally conductive pillar, heat generated during operations of the first electronic element and the second electronic element can be quickly dissipated to an external environment and would not accumulate.

A semiconductor package includes a leadframe including leads and a die attach pad (DAP) inside the leads, and at least one semiconductor die having a top side including circuitry electrically connected to bond pads and a bottom side attached to a bottom side portion of the DAP. The package includes a mold compound and a heat slug having a top side and a bottom side positioned within a cavity defined by sidewalls of the mold compound. The heat slug has an area greater than an area of the DAP is attached by its bottom side with a thermally conductive adhesive material to a top side portion of the DAP. Bondwires are between the leads and the bond pads. Exposed from the mold compound is a bottom side surfaces of the leads and the top side of the heat slug.

Electrically conductive compressible gaskets can be employed to ground a heat solution and provide electromagnetic interference (EMI) shielding. A plurality of gaskets may be arranged around the perimeter of an integrated circuit package such as a processor or system on a chip. Each of the gaskets is in contact with a ground plane in the package, and upon contact with a heat sink or cold plate, creates an electrical path that grounds the heat sink or cold plate and thereby minimizes the emission of spurious radio signals. Other embodiments may be described and/or claimed.

A package structure is provided. The package structure includes a reinforced plate and multiple conductive structures penetrating through the reinforced plate. The package structure also includes a redistribution structure over the reinforced plate. The redistribution structure has multiple polymer-containing layers and multiple conductive features. The package structure further includes multiple chip structures bonded to the redistribution structure through multiple solder bumps. In addition, the package structure includes a protective layer surrounding the chip structures.