A semiconductor chip comprises a substrate, a die attach material, and a die. The substrate comprises an upper surface and a lower surface opposing the upper surface. The die attach material is on the upper surface of the substrate. The die comprises a bottom surface bonded to the upper surface of the substrate by the die attach material, a top surface opposing the bottom surface, and a side wall adjacent to the top surface and the bottom surface. A shortest distance across an exterior of the side wall from the bottom surface to the top surface defines an exterior surface distance. The die further comprises a die height measured from where the side wall meets the bottom surface to where the side wall meets the top surface. The exterior surface distance is longer than the die height.

The present disclosure provides a module including a circuit board, a first component and a second component. The circuit board includes a first side and a second side opposite to each other and includes a first plane and second plane disposed on the first side. A first height difference is formed between the first plane and the second plane. The first component and the second component are disposed on the first plane and the second plane, respectively. The first component and the second component include a first contact surface and a second contact surface, respectively. The first contact surface and the second contact surface are coplanar with a first surface of the module. It benefits to reduce the design complexity of a heat-transfer component, and enhance the heat dissipation capability and the overall power density of the module simultaneously.

A semiconductor device includes: a case having an opening; a semiconductor element contained in the case; a control substrate which is disposed above the semiconductor element in the case and on which a control circuit to control the semiconductor element is disposed; a lid to cover the opening of the case; and a control terminal having one end portion connected to the control circuit disposed on the control substrate and the other end portion protruding out of the case. The control terminal has a bend in the case, and a side portion of the case or the lid is provided with a support capable of supporting the bend.

A package structure includes a semiconductor device, a circuit substrate and a heat dissipating lid. The semiconductor device includes a semiconductor die. The circuit substrate is bonded to and electrically coupled to the semiconductor device. The heat dissipating lid is bonded to the circuit substrate and thermally coupled to the semiconductor device, where the semiconductor device is located in a space confined by the heat dissipating lid and the circuit substrate. The heat dissipating lid includes a cover portion and a flange portion bonded to a periphery of the cover portion. The cover portion has a first surface and a second surface opposite to the first surface, where the cover portion includes a recess therein, the recess has an opening at the second surface, and a thickness of the recess is less than a thickness of the cover portion, where the recess is part of the space.

A package structure includes a semiconductor device, a circuit substrate and a heat dissipating lid. The semiconductor device includes a semiconductor die. The circuit substrate is bonded to and electrically coupled to the semiconductor device. The heat dissipating lid is bonded to the circuit substrate and thermally coupled to the semiconductor device, where the semiconductor device is located in a space confined by the heat dissipating lid and the circuit substrate. The heat dissipating lid includes a cover portion and a flange portion bonded to a periphery of the cover portion. The cover portion has a first surface and a second surface opposite to the first surface, where the cover portion includes a recess therein, the recess has an opening at the second surface, and a thickness of the recess is less than a thickness of the cover portion, where the recess is part of the space.

A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, an interposer substrate over the package substrate, semiconductor dies over the interposer substrate, and an underfill element over the interposer substrate and between the semiconductor dies and interposer substrate. The semiconductor die package also includes a ring structure and one or more lid structures separated from the ring structure. The ring structure is coupled to the package substrate to control warpage. The lid structures are coupled to the top surfaces of the semiconductor dies to control warpage and help heat dissipation. In addition, the lid structures define a gap to allow a portion of the underfill element between the adjacent semiconductor dies to be exposed, so that stress concentration on that portion can be avoided or reduced. Accordingly, the reliability of the semiconductor die package is improved.

A packaging technology to improve performance of an AI processing system resulting in an ultra-high bandwidth system. An IC package is provided which comprises: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die can be a first logic die (e.g., a compute chip, CPU, GPU, etc.) while the second die can be a compute chiplet comprising ferroelectric or paraelectric logic. Both dies can include ferroelectric or paraelectric logic. The ferroelectric/paraelectric logic may include AND gates, OR gates, complex gates, majority, minority, and/or threshold gates, sequential logic, etc. The IC package can be in a 3D or 2.5D configuration that implements logic-on-logic stacking configuration. The 3D or 2.5D packaging configurations have chips or chiplets designed to have time distributed or spatially distributed processing. The logic of chips or chiplets is segregated so that one chip in a 3D or 2.5D stacking arrangement is hot at a time.

Disclosed is a semiconductor article including: a metal bus bar and a metal heat sink wherein at least a portion of a first side of the metal bus bar is bonded to at least a portion of the metal heat sink by a polyimide layer without adhesive; and a semiconductor power device disposed on a second side of the metal bus bar.

Disclosed is a semiconductor article including: a metal bus bar and a metal heat sink wherein at least a portion of a first side of the metal bus bar is bonded to at least a portion of the metal heat sink by a polyimide layer without adhesive; and a semiconductor power device disposed on a second side of the metal bus bar.

A semiconductor package is provided that includes: a package substrate; an interposer mounted on the package substrate; a first semiconductor chip mounted on the interposer; a plurality of second semiconductor chips mounted on the interposer to surround at least a portion of the first semiconductor chip; a heat radiation member arranged on the first semiconductor chip and the plurality of second semiconductor chips; and a heat blocking member extending from a portion of the heat radiation member and arranged in at least one space among a first space between the first semiconductor chip and at least one of the plurality of second semiconductor chips and a second space between at least two of the plurality of second semiconductor chips.