A jet impingement cooling assembly for semiconductor devices includes a heat exchange base having an inlet chamber and an outlet chamber. An inlet connection may be in fluid connection with the inlet chamber, while an outlet connection may be in fluid connection with the outlet chamber. A jet plate may be coupled to the inlet chamber, and a jet pedestal may be formed on the jet plate and having a raised surface with a jet nozzle formed therein.

Provided is a thermostatic type crystal oscillator with short operation stabilization time and low power consumption.

A thermostatic type crystal oscillator according to the present invention includes a crystal resonator including an IT-cut crystal blank, a vibration control circuit configured to control a vibration frequency of the crystal resonator, a temperature regulator configured to regulate a temperature of the crystal resonator within a set temperature range by repeating heating and cooling to the crystal resonator, a heat conducting plate configured to function as a heat absorbing plate and a heat dissipating plate for the temperature regulator, a temperature control circuit configured to control a temperature of the temperature regulator, and a housing that accommodates the crystal resonator. The housing defines a resonator accommodating space in which the crystal resonator is accommodated inside the housing.

Provided is a preparation method for a thermoelectric composite. The preparation method for a thermoelectric composite comprises the steps of: preparing a base substrate containing a first binary metal oxide; and providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second biliary metal oxide resulting from the reaction of the metal precursor and the reaction material, wherein in the step of forming the material film, a 2-dimensional electron gas is generated between the base substrate and the material film as the material film is formed on the base substrate.

The invention provides a portable electronic system. The portable electronic system includes a semiconductor package. The semiconductor package includes a substrate. A semiconductor die is coupled to the substrate. A thermoelectric device chip is disposed close to the semiconductor die, coupled to the substrate. The thermoelectric device chip is configured to detect a heat energy generated from the semiconductor die and to convert the heat energy into a recycled electrical energy. A power system is coupled to the semiconductor package, configured to store the recycled electrical energy.

Cooling devices for SOI wafers and methods for forming the devices are presented. A substrate having a top surface layer, a support substrate and an insulator layer isolating the top surface layer from the support substrate is provided. At least one device is disposed in the top surface layer of the substrate. The IC includes a cooling device. The cooling device includes a doped layer which is disposed in a top surface of the support substrate, and a RDL layer disposed within the support substrate below the doped layer for providing connections to hotspots in the doped layer to facilitate thermoelectric conduction of heat in the hotspots away from the hotspots.

Cooling devices for SOI wafers and methods for forming the devices are presented. A substrate having a top surface layer, a support substrate and an insulator layer isolating the top surface layer from the support substrate is provided. At least one device is disposed in the top surface layer of the substrate. The IC includes a cooling device. The cooling device includes a doped layer which is disposed in a top surface of the support substrate, and a RDL layer disposed within the support substrate below the doped layer for providing connections to hotspots in the doped layer to facilitate thermoelectric conduction of heat in the hotspots away from the hotspots.

An Integrated Circuit (IC) assembly, comprising an IC package coupled to a substrate, and a subassembly comprising a thermal interface layer. The thermal interface layer comprises a phase change material (PCM) over the IC package. At least one thermoelectric cooling (TEC) apparatus is thermally coupled to the thermal interface layer.

An Integrated Circuit (IC) assembly, comprising an IC package coupled to a substrate, and a subassembly comprising a thermal interface layer. The thermal interface layer comprises a phase change material (PCM) over the IC package. At least one thermoelectric cooling (TEC) apparatus is thermally coupled to the thermal interface layer.

An optical module includes: a quantum photonic integrated circuit; a temperature controller; and a housing configured to house the photonic integrated circuit and the temperature controller. The photonic integrated circuit is attached to the temperature controller, such that the photonic integrated circuit is in thermal communication with the temperature controller, and the temperature controller is attached directly to the housing, such that the temperature controller is in direct thermal communication with the housing.

An optical module includes: a quantum photonic integrated circuit; a temperature controller; and a housing configured to house the photonic integrated circuit and the temperature controller. The photonic integrated circuit is attached to the temperature controller, such that the photonic integrated circuit is in thermal communication with the temperature controller, and the temperature controller is attached directly to the housing, such that the temperature controller is in direct thermal communication with the housing.