An apparatus for thermal interface material detection includes a heat dissipating device stack up that includes a heat dissipating device, a thermal interface material, a heat generating component, and a printed circuit board. The heat dissipating device is disposed on the thermal interface material, the thermal interface material is disposed on the heat generating component, and the heat generating component is disposed on the printed circuit board. A channel in a body of the heat dissipating device includes an embedded conductive probe, where a first end of the embedded conductive probe leads to a lower surface of the body of the heat dissipating device and a second end of the embedded conductive probe leads to an upper surface of the body of the heat dissipating device.

A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.

A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.

A package structure includes first/second/third package components, a thermal interface material (TIM) structure overlying the first package component opposite to the second package component, and a heat dissipating component disposed on the third package component and thermally coupled to the first package component through the TIM structure. The first package component includes semiconductor dies and an insulating encapsulation encapsulating the semiconductor dies, the second package component is interposed between the first and third package components, and the semiconductor dies are electrically coupled to the third package component via the second package component. The TIM structure includes a dielectric dam and thermally conductive members including a conductive material, disposed within areas confined by the dielectric dam, and overlying the semiconductor dies. A manufacturing method of a package structure is also provided.

Some implementations of the disclosure are directed to a thermal interface material. In some implementations, a method comprises: applying a solder paste between a surface of a heat generating device and a surface of a heat transferring device to form an assembly; and reflow soldering the assembly to form a solder composite, wherein the solder composite provides a thermal interface between the heat generating device and the heat transferring device, wherein the solder paste comprises: a solder powder; particles having a higher melting temperature than a soldering temperature of the solder paste, wherein the solder paste has a volume ratio of solder powder to high melting temperature particles between 5:1 and 1:1.5; and flux.

A circuit module (e.g., an amplifier module) includes a module substrate, a thermal dissipation structure, a semiconductor die, encapsulant material, and an interposer. The module substrate has a mounting surface and a plurality of conductive pads at the mounting surface. The thermal dissipation structure extends through the module substrate, and a surface of the thermal dissipation structure is exposed at the mounting surface of the module substrate. The semiconductor die is coupled to the surface of the thermal dissipation structure. The encapsulant material covers the mounting surface of the module substrate and the semiconductor die, and a surface of the encapsulant material defines a contact surface of the circuit module. The interposer is embedded within the encapsulant material. The interposer includes a conductive terminal with a proximal end coupled to a conductive pad of the module substrate, and a distal end exposed at the contact surface of the circuit module.

A circuit module (e.g., an amplifier module) includes a module substrate, a thermal dissipation structure, a semiconductor die, encapsulant material, and an interposer. The module substrate has a mounting surface and a plurality of conductive pads at the mounting surface. The thermal dissipation structure extends through the module substrate, and a surface of the thermal dissipation structure is exposed at the mounting surface of the module substrate. The semiconductor die is coupled to the surface of the thermal dissipation structure. The encapsulant material covers the mounting surface of the module substrate and the semiconductor die, and a surface of the encapsulant material defines a contact surface of the circuit module. The interposer is embedded within the encapsulant material. The interposer includes a conductive terminal with a proximal end coupled to a conductive pad of the module substrate, and a distal end exposed at the contact surface of the circuit module.

A multi-chip unit suitable for chip-level packaging may include multiple IC chips that are interconnected through a metal redistribution structure, and that are directly bonded to an integrated heat spreader. Bonding of the integrated heat spreader to the multiple IC chips may be direct so that no thermal interface material (TIM) is needed, resulting in a reduced bond line thickness (BLT) and lower thermal resistance. The integrated heat spreader may further serve as a structural member of the multi-chip unit, allowing a second side of the redistribution structure to be further interconnected to a host by solder interconnects. The redistribution structure may be fabricated on a sacrificial interposer that may facilitate planarizing IC chips of differing thickness prior to bonding the heat spreader. The sacrificial interposer may be removed to expose the RDL for further interconnection to a substrate without the use of through-substrate vias.

An integrated circuit package that includes a liquid phase thermal interface material (TIM) is described. The package may include any number of die. The liquid phase TIM can be sealed in a chamber between a die and an integrated heat spreader and bounded on the sides by a perimeter layer. The liquid phase TIM can be fixed in place or circulated, depending on application. A thermal conductivity of the liquid phase TIM can be at least 15 Watts/meter-Kelvin, according to some embodiments. A liquid phase TIM eliminates failure mechanisms present in solid phase TIMs, such as cracking due to warpage and uncontained flow out of the module.

An integrated circuit package that includes a liquid phase thermal interface material (TIM) is described. The package may include any number of die. The liquid phase TIM can be sealed in a chamber between a die and an integrated heat spreader and bounded on the sides by a perimeter layer. The liquid phase TIM can be fixed in place or circulated, depending on application. A thermal conductivity of the liquid phase TIM can be at least 15 Watts/meter-Kelvin, according to some embodiments. A liquid phase TIM eliminates failure mechanisms present in solid phase TIMs, such as cracking due to warpage and uncontained flow out of the module.