Patent classifications
H01L23/46
Semiconductor device
A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.
COPPER-CERAMIC BONDED BODY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER-CERAMIC BONDED BODY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
A copper-ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of silicon nitride, the copper member and the ceramic member being bonded to each other, in which a maximum length of a Mg—N compound phase which is present at a bonded interface between the copper member and the ceramic member is less than 100 nm, and in a unit length along the bonded interface, the number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.
SEMICONDUCTOR DEVICE
Provided is a semiconductor device including; at least a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of a c-axis in the semiconductor layer being the first direction.
SEMICONDUCTOR DEVICE
Provided is a semiconductor device including; at least a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of a c-axis in the semiconductor layer being the first direction.
Cooling system
A cooling system for a data center includes an evaporative condenser, a pump cabinet and a heat exchange terminal. The pump cabinet has a first branch and a second branch, the first branch including a liquid storage tank and a fluorine pump. An input end of the liquid storage tank is connected to an output end of the evaporative condenser, an output end of the liquid storage tank is connected to an input end of the fluorine pump, and an output end of the fluorine pump is connected to an input end of the heat exchange terminal. The second branch includes a compressor with an input end connected to an output end of the heat exchange terminal and an output end connected to an input end of the evaporative condenser.
Cooling system
A cooling system for a data center includes an evaporative condenser, a pump cabinet and a heat exchange terminal. The pump cabinet has a first branch and a second branch, the first branch including a liquid storage tank and a fluorine pump. An input end of the liquid storage tank is connected to an output end of the evaporative condenser, an output end of the liquid storage tank is connected to an input end of the fluorine pump, and an output end of the fluorine pump is connected to an input end of the heat exchange terminal. The second branch includes a compressor with an input end connected to an output end of the heat exchange terminal and an output end connected to an input end of the evaporative condenser.
Thermal management solutions for integrated circuit packages
An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.
Thermal management solutions for integrated circuit packages
An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.
RADIATOR STRUCTURE
A radiator structure is provided. The radiator structure includes a substrate, a first metal coating layer and a second metal coating layer. The first metal coating layer and the second metal coating layer are made of materials different from one another, and are formed on the substrate by different processes. The first metal coating layer is a non-first masking area formed on the substrate by wet processing. The second metal coating layer is a non-second masking area correspondingly formed on the first metal coating layer and the substrate by sputtering. A first masking area and a second masking area are not necessarily the same.
TECHNOLOGIES FOR PACKAGE LOADING MECHANISMS
Techniques for package loading mechanisms are disclosed. In the illustrative embodiment, a base portion of a laptop includes a circuit board on which an integrated circuit component is mounted. A heat sink is mated with the integrated circuit component. A spring presses against part of the chassis of the laptop, pressing the integrated circuit component and the heat sink together, providing strong thermal coupling between them.