Certain aspects of the present disclosure provide an integrated circuit (IC) package and techniques for fabricating the IC package. The IC package generally includes a substrate, an IC disposed above the substrate, and a shielding layer coupled to a layer of the substrate, wherein the shielding layer is disposed above the substrate adjacent to the IC, and below an upper surface of the IC.

According to one embodiment, there is provided a semiconductor device including a substrate, a semiconductor chip, and a conductive film. The substrate has a main face. The semiconductor chip has a surface equipped with an SRAM circuit. The semiconductor chip is mounted on the main face via a plurality of bump electrodes in a state where the surface faces the main face. The conductive film is disposed on the main face or the surface. The conductive film extends planarly between the plurality of bump electrodes. A region in the main face or the surface where the conductive film is disposed overlaps the SRAM circuit in a direction perpendicular to the main face.

According to one embodiment, there is provided a semiconductor device including a substrate, a semiconductor chip, and a conductive film. The substrate has a main face. The semiconductor chip has a surface equipped with an SRAM circuit. The semiconductor chip is mounted on the main face via a plurality of bump electrodes in a state where the surface faces the main face. The conductive film is disposed on the main face or the surface. The conductive film extends planarly between the plurality of bump electrodes. A region in the main face or the surface where the conductive film is disposed overlaps the SRAM circuit in a direction perpendicular to the main face.

Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

A soft error rate (SER) associated with a design of a semiconductor circuit may be predicted based on implementing a simulation associated with the design. The simulation may include generating a simulation environment based on information indicating the design, performing a particle strike simulation based on the simulation environment to generate charge deposition information, and calculating a collected charge quantity from the charge deposition information. A determination may be made whether the SER predicted based on the collected charge quantity at least meets a threshold. The design may be modified, and the simulation repeated, if the predicted SER value meets a threshold value. A semiconductor circuit may be manufactured based on the design if the predicted SER value is less than the threshold value.

Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.

Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.

Provided is low alpha-ray emitting bismuth having an alpha dose of 0.003 cph/cm.sup.2 or less. Additionally provided is a method of producing low alpha-ray emitting bismuth, wherein bismuth having an alpha dose of 0.5 cph/cm.sup.2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin. Recent semiconductor devices are of high density and high capacity, and therefore are subject to increased risk of soft errors caused by the effects of alpha rays emitted from materials in the vicinity of semiconductor chips. In particular, there is a strong demand for higher purification of solder materials used near semiconductor devices, and there is a demand for low alpha-ray emitting materials. Therefore, the present invention aims to elucidate the phenomenon of alpha ray generation from bismuth, and to provide a low alpha-ray emitting, high-purity bismuth that can be applied to the required materials and a production method thereof, as well as to provide an alloy of low alpha-ray emitting bismuth and tin and a production method thereof.

A semiconductor device according to an embodiment includes a substrate, an -ray shielding layer, a first semiconductor chip, and a second semiconductor chip. The -ray shielding layer is provided on the substrate. The first semiconductor chip is provided on the -ray shielding layer. The second semiconductor chip is provided on the first semiconductor chip, whose operation is controlled by the first semiconductor chip.