Provided is a packaging method, including: providing a base with a groove in its surface, which includes at least one pad exposed by the groove; providing a chip having a first surface and a second surface opposite to each other, at least one conductive bump being provided on the first surface of the chip; filling a first binder in the groove; applying a second binder on the first surface of the chip and the conductive bump; and installing the chip on the base, the conductive bump passing through the first binder and the second binder to connect with the pad.

A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

A semiconductor device includes a substrate, an active region provided in the substrate, a plurality of gate fingers provided on the active region, extending in an extension direction, and arranged in an arrangement direction orthogonal to the extension direction, and a gate connection wiring commonly connected to the plurality of gate fingers and provided between the plurality of gate fingers and a first side surface of the substrate, wherein when viewed from the arrangement direction, a first position where a first end of a first gate finger as a part of the plurality of gate fingers is connected to the gate connection wiring is closer to the first side surface than a second position where a first end of a second gate finger as another part of the plurality of gate fingers is connected to the gate connection wiring.

A semiconductor package includes a plurality of inorganic dielectric layers including a plurality of metal interconnect layers formed therein and a plurality of first contact pads, a plurality of organic dielectric layers disposed on and electrically connected to the plurality of inorganic dielectric layers and including a plurality of metal redistribution layers formed therein, wherein the plurality of metal redistribution layers are physically connected to the plurality of first contact pads, and a semiconductor die mounted on the plurality of organic dielectric layers and electrically connected to the plurality of metal redistribution layers through the plurality of metal interconnect layers.

In a method of manufacturing a semiconductor package, a first semiconductor device is arranged on a package substrate. An electrostatic discharge structure is formed on at least one ground substrate pad exposed from an upper surface of the package substrate. A plurality of second semiconductor devices is stacked on the package substrate and spaced apart from the first semiconductor device, the electrostatic discharge structure being interposed between the first semiconductor device and the plurality of second semiconductor devices. A molding member is formed on the package substrate to cover the first semiconductor device and the plurality of second semiconductor devices.

Embodiments of three-dimensional (3D) memory devices have a hydrogen blocking layer and fabrication methods thereof are disclosed. In an example, a method for form a 3D memory device is disclosed. An array of NAND memory strings each extending vertically above a first substrate are formed. A plurality of logic process-compatible devices are formed on a second substrate. The first substrate and the second substrate are bonded in a face-to-face manner. The logic process-compatible devices are above the array of NAND memory strings after the bonding. The second substrate is thinned to form a semiconductor layer above and in contact with the logic process-compatible devices.

A semiconductor device includes: a first chip including first and second electrodes provided at a first surface, and a third electrode provided at a second surface positioned at a side opposite to the first surface; a second chip including fourth and fifth electrodes provided at a third surface, and a sixth electrode provided at a fourth surface positioned at a side opposite to the third surface, wherein the second chip is disposed to cause the third surface to face the first surface; a first connector disposed between the first electrode and the fourth electrode and connected to the first and fourth electrodes; and a second connector disposed between the second electrode and the fifth electrode and connected to the second and fifth electrodes.

In a general aspect, a method for producing a semiconductor device assembly can include defining a cavity in a conductive spacer, and electrically and thermally coupling a semiconductor die with the conductive spacer, such that the semiconductor die is at least partially embedded in the cavity. The semiconductor die can have a first surface having active circuitry included therein, a second surface opposite the first surface, and a plurality of side surfaces each extending between the first surface of the semiconductor die and the second surface of the semiconductor die. The method can also include electrically coupling a direct bonded metal (DBM) substrate with the first surface of the semiconductor die.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.