A display device includes a display panel and a first protective substrate positioned under the display panel and including a first sub-region and a second sub-region positioned at a side of the first sub-region. A thickness of the first protective substrate in the first sub-region is greater than a thickness of the first protective substrate in the second sub-region.

An integrated circuit (IC) includes a capacitor array in at least one first back-end-of-line (BEOL) interconnect level. The capacitor array includes a pair of capacitor manifolds coupled to parallel capacitor routing traces and capacitors coupled between each pair of parallel capacitor routing traces. The IC also includes an inductor trace having at least one turn in at least one second BEOL interconnect level. The inductor trace defines a perimeter to overlap at least a portion of the capacitor array.

Co-fired integrated circuit devices and methods for fabricating and integrating such on a workpiece are disclosed herein. An exemplary method includes forming a first passive device and a second passive device over a carrier substrate. The first passive device and the second passive device each include at least one material layer that includes a co-fired ceramic material. The carrier substrate is removed after performing a co-firing process to cause chemical changes in the co-fired ceramic material. The first passive device may include a conductive loop disposed between a first magnetic layer and a second magnetic layer. The first magnetic layer, the second magnetic layer, or both includes a co-fired ceramic magnetic material. The second passive device may include a first conductive layer and a second conductive layer separated by a dielectric layer. The first conductive layer, the second conductive layer, or both includes a co-fired ceramic conductive material.

A deep trench capacitor having a high capacity is formed into a deep trench having faceted sidewall surfaces. The deep trench is located in a bulk silicon substrate that contains an upper region of undoped silicon and a lower region of n-doped silicon. The lower region of the bulk silicon substrate includes alternating regions of n-doped silicon that have a first boron concentration (i.e., boron deficient regions), and regions of n-doped silicon that have a second boron concentration which is greater than the first boron concentration (i.e., boron rich regions).

A deep trench capacitor having a high capacity is formed into a deep trench having faceted sidewall surfaces. The deep trench is located in a bulk silicon substrate that contains an upper region of undoped silicon and a lower region of n-doped silicon. The lower region of the bulk silicon substrate includes alternating regions of n-doped silicon that have a first boron concentration (i.e., boron deficient regions), and regions of n-doped silicon that have a second boron concentration which is greater than the first boron concentration (i.e., boron rich regions).

A deep trench capacitor having a high capacity is formed into a deep trench having faceted sidewall surfaces. The deep trench is located in a bulk silicon substrate that contains an upper region of undoped silicon and a lower region of n-doped silicon. The lower region of the bulk silicon substrate includes alternating regions of n-doped silicon that have a first boron concentration (i.e., boron deficient regions), and regions of n-doped silicon that have a second boron concentration which is greater than the first boron concentration (i.e., boron rich regions).

A variety of integrated circuit devices and a method for their formation and integration are provided. The integrated circuit devices may include inductors, capacitors, and/or other passive devices. In an exemplary embodiment, a first substrate is received and a conductive material is applied to the first substrate such that a loop of the conductive material is formed on the first substrate. A magnetic material is applied to the first substrate and surrounds at least a portion of the loop. A thermal process is performed on the first substrate having the conductive material and the magnetic material applied thereupon. The conductive material is bonded to a second substrate, and thereafter, the conductive material and the magnetic material are separated from the first substrate.

A display device includes a display panel and a first protective substrate positioned under the display panel and including a first sub-region and a second sub-region positioned at a side of the first sub-region. A thickness of the first protective substrate in the first sub-region is greater than a thickness of the first protective substrate in the second sub-region.

Single layer capacitors and circuit boards having such capacitors are provided. A circuit board can include a circuit board substrate having a mounting surface and a single layer capacitor at least partially embedded therein. The single layer capacitor includes a first conductive layer formed over at least a portion of a substrate first surface and a second conductive layer formed over at least a portion of a substrate second surface. At least one of the first or second conductive layers has a thickness that is at least about 5 microns. A method of forming a single layer capacitor includes depositing a first conductive layer over at least a portion of a substrate first surface and depositing a second conductive layer over at least a portion of a substrate second surface. At least one of the first or second conductive layers has a thickness that is at least about 5 microns.

A display apparatus including: a substrate including a first area, a second area, and a bending area between the first area and the second area, the substrate being bent with respect to a bending axis extending in a first direction; a display disposed on the first area of the substrate; a panel driver disposed on the second area of the substrate; and a functional film disposed on the second area and the bending area of the substrate, the functional film covering the panel driver and extending to the bending area.