A quantum dot device is disclosed that includes a quantum well stack, a first and a second plunger gates above the quantum well stack, and a passive barrier element provided in a portion of the quantum well stack between the first and the second plunger gates. The passive barrier element may serve as means for localizing charge in the quantum dot device and may be used to replace charge localization control by means of a barrier gate. In general, a quantum dot device with a plurality of plunger gates provided over a given quantum well stack may include a respective passive barrier element between any, or all, of adjacent plunger gates in the manner as described for the first and second plunger gates.

The disclosure discloses an array substrate, an OLED display panel and a display device. A storage capacitor includes a first capacitor and a second capacitor which are connected in parallel, wherein the first capacitor includes a storage electrode and a first electrode, a layer where the first electrode is located is same as a layer where the grid electrode of the driving transistor is located, the second capacitor includes the storage electrode and a second electrode, a layer where the second electrode is located is same as a layer where the power supply voltage line is located, and the first electrode and the second electrode are electrically connected through a via hole penetrating through a first insulating layer and a second insulating layer.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum processing device may include a quantum well stack, the quantum well stack includes a quantum well layer, the quantum processing device further includes a plurality of gates above the quantum well stack to control quantum dot formation in the quantum well stack, and (1) gate metal of individual gates of the array of gates is tapered so as to narrow farther from the quantum well stack or (2) top surfaces of gate metal of individual gates of the array of gates are dished.

A semiconductor device including a semiconductor substrate, first and second transistor sections and a diode section provided on the substrate, is provided. The diode section is arranged to be adjacent to and sandwiched between the first and second transistor sections in a predetermined arrangement direction. The diode section includes a drift region; a base region above the drift region; first cathode regions and second cathode regions below the drift region. The first and second transistor sections each include a collector region. The first cathode regions are provided continuously between the collector regions of the first and second transistor sections. One end and another end of the first cathode regions in the arrangement direction are in contact with the collector regions of the first and second transistor sections, respectively. The first and second cathode regions are in contact with each other and alternating in a direction orthogonal to the arrangement direction.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material disposed above the quantum well stack, wherein the insulating material includes a trench; and a gate metal disposed on the insulating material and extending into the trench.

Devices and methods prevent injection of a substrate current into the substrate Sub of a CMOS circuit. The devices detect the potential of a contact of the integrated CMOS circuit, compare the value of the potential detected with a reference value and connect the contact to a leakage circuit node for discharging the current such that same does not flow to ground via the parasitic bipolar lateral structure. The leakage circuit node can be connected to the reference potential line or to another line that has a higher potential than the reference potential line. This electrical connection is activated when the value of the potential of the contact is lower than or equal to a reference value.

Devices and methods prevent injection of a substrate current into the substrate Sub of a CMOS circuit. The devices detect the potential of a contact of the integrated CMOS circuit, compare the value of the potential detected with a reference value and connect the contact to a leakage circuit node for discharging the current such that same does not flow to ground via the parasitic bipolar lateral structure. The leakage circuit node can be connected to the reference potential line or to another line that has a higher potential than the reference potential line. This electrical connection is activated when the value of the potential of the contact is lower than or equal to a reference value.

Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes a semiconductor substrate, an epitaxial layer grown on a side of the semiconductor substrate; a quantum dot transport layer disposed on the epitaxial layer; and a gate oxide layer disposed on the quantum dot transport layer. With this arrangement, the semiconductor device provided by the present disclosure may reduce a threshold voltage while ensuring gate electrode reliability.