According to the embodiment, a semiconductor device includes: a substrate; a stacked body provided on the substrate and including a plurality of electrode layers stacked with an insulator interposed; a semiconductor pillar provided on the substrate and in the stacked body; a semiconductor body provided in the stacked body; and an insulating film including a charge storage film provided between the plurality of electrode layers and the semiconductor body, and extending in the stacking direction. The semiconductor body includes a first portion and a second portion. The first portion is surrounded with the plurality of electrode layers and extends in a stacking direction of the stacked body. The second portion is in contact with an upper surface of the semiconductor pillar.

A method for manufacturing an element chip includes a laser dicing step of dividing the substrate to a plurality of element chips including the element region by irradiating the dividing region of the substrate with laser light, in a state of supported by a supporting member and forming a damaged region on an end surface of the element chip. Furthermore, the method for manufacturing an element chip includes a protection film stacking step of stacking a protection film on the first main surface and the end surface of the element chip, after the laser dicing step and a protection film etching step of removing the protection film stacked on the first main surface through etching the protection film anisotropically by exposing the element chip to plasma, after the protection film stacking, step and remaining the protection film for covering the damaged region.

A method for manufacturing an element chip includes a laser dicing step of dividing the substrate to a plurality of element chips including the element region by irradiating the dividing region of the substrate with laser light, in a state of supported by a supporting member and forming a damaged region on an end surface of the element chip. Furthermore, the method for manufacturing an element chip includes a protection film stacking step of stacking a protection film on the first main surface and the end surface of the element chip, after the laser dicing step and a protection film etching step of removing the protection film stacked on the first main surface through etching the protection film anisotropically by exposing the element chip to plasma, after the protection film stacking, step and remaining the protection film for covering the damaged region.

The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

A method for processing a transparent workpiece includes generating a beam of radiation and forming a defect in or on an object. The beam is a quasi-non-diffracting beam and has a focal volume. Forming the defect includes directing the beam onto the object and positioning the focal volume partially or fully within the object. Generating the beam includes partially blocking the beam upstream of the focal volume to adjust an axial symmetry of the freeform energy distribution with respect to an optical axis of the beam using an adjustable blocking element and/or spatially modulating a phase of the beam upstream of the focal volume to adjust a geometry of the freeform energy distribution using a phase mask. The freeform energy distribution has energy sufficient to induce multi-photon absorption in a region of the object that is co-located with the focal volume. The induced multi-photon absorption produces the defect.

A silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):

D=(BPD1−BPD2)/BPD1≤25%  (1).

A semiconductor device according to the present invention includes a mount substrate, an adhesive applied to the mount substrate, and a device having its lower surface bonded to the mount substrate with the adhesive. The surface roughness of a side surface upper portion of the device is lower than that of a side surface lower portion of the device.

A semiconductor device according to the present invention includes a mount substrate, an adhesive applied to the mount substrate, and a device having its lower surface bonded to the mount substrate with the adhesive. The surface roughness of a side surface upper portion of the device is lower than that of a side surface lower portion of the device.

A silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):
D=(BPD1−BPD2)/BPD1≤25%  (1).