The method that includes the step of a cleaning a surface of a silicon wafer and forming a sacrificial layer on top of the silicon wafer. The wafer undergoes further processing, wherein the processing includes forming at least one layer directly on top of the sacrificial layer. Immediately prior to the insertion into a dilute refrigeration unit removing a portion of the sacrificial layer by exposing the portion of the sacrificial layer to a solvent.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

Josephson junctions (JJ) may replace primary inductance of transformers to realize galvanic coupling between qubits, advantageously reducing size. A long-range symmetric coupler may include a compound JJ (CJJ) positioned at least approximately at a half-way point along the coupler to advantageously provide a higher energy of a first excited state than that of an asymmetric long-range coupler. Quantum processors may include qubits and couplers with a non-stoquastic Hamiltonian to enhance multi-qubit tunneling during annealing. Qubits may include additional shunt capacitances, e.g., to increase overall quality of a total capacitance and improve quantum coherence. A sign and/or magnitude of an effective tunneling amplitude Δ.sub.eff of a qubit characterized by a double-well potential energy may advantageously be tuned. Sign-tunable electrostatic coupling of qubits may be implemented, e.g., via resonators, and LC-circuits. YY couplings may be incorporated into a quantum anneaier (e.g., quantum processor).

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include: a package substrate; a first die coupled to the package substrate; and a second die coupled to the second surface of the package substrate and coupled to the first die; wherein the first die or the second die includes quantum processing circuitry.

A quantum wire device includes a barrier formed by an insulator or a wide bandgap semiconductor, and metal quantum wires comprising a metal material and embedded in the barrier. Potential wells are formed for electrons in the metal quantum wires by the insulator or the wide bandgap semiconductor. The work function of the metal quantum wires is reduced by quantum confinement compared to a bulk form of the metal material. The metal quantum wires are electrically connected. The metal quantum wires include an exposed active area for electron emission or electron collection.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a plurality of gates disposed on the quantum well stack; and a top gate at least partially disposed on the plurality of gates such that the plurality of gates are at least partially disposed between the top gate and the quantum well stack.

A semiconductor device may include a first single crystal silicon layer having a first percentage of silicon 28; a second single crystal silicon layer having a second percentage of silicon 28 higher than the first percentage of silicon 28; and a superlattice between the first and second single crystal silicon layers. The superlattice may include stacked groups of layers, with each group of layers including stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions.

A quantum dot device is disclosed that includes a quantum well stack, a first and a second plunger gates above the quantum well stack, and a passive barrier element provided in a portion of the quantum well stack between the first and the second plunger gates. The passive barrier element may serve as means for localizing charge in the quantum dot device and may be used to replace charge localization control by means of a barrier gate. In general, a quantum dot device with a plurality of plunger gates provided over a given quantum well stack may include a respective passive barrier element between any, or all, of adjacent plunger gates in the manner as described for the first and second plunger gates.

The quantum device comprises a transmission structure, wherein based on its geometrical arrangement, interference and quantum collapse, the transmission structure is designed such that quantum waves emitted by at least two bodies, for example, by thermal excitation, are passed preferentially to a subset of these bodies, without the need for a magnetic field to be applied.

A semiconductor device includes a layer of a semiconductor material in which is formed an active zone; a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in part the active zone; a plurality of second gates forming a plurality of columns; at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, and a first electrode and a second electrode situated on either side of the plurality of measurement gates in the active zone.