A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

A Qbit spin quantum device includes juxtaposed first and second semiconducting portions, the semiconducting portions being formed in a surface layer of a semiconductor-on-insulator type substrate and disposed on an insulating layer of the substrate, the substrate being fitted with a semiconducting support layer such that the insulating layer is arranged between the support layer and the surface layer, and several pairs of front control gates, each pair being formed respectively of first and second front control gates covering a region of the first and second semiconducting portions to form first and second quantum islands, respectively. An insulating region is provided between the first and second quantal islands to enable electrostatic coupling between the first and second quantum islands. The quantum device includes a back conductive electrode vertically aligned with a coupling insulating region and being formed of a region of metal-semiconductor material alloy arranged in the support layer.

The present disclosure relates to a graphene spin transistor for all-electrical operation at room temperature and a logic gate using the graphene Rashba spin transistor. A graphene spin transistor of the present disclosure provides a graphene spin FET (Field Effect Transistor) for all-electrical operation at room temperature without a magnetic field or a ferromagnetic electrode by utilizing the Rashba-Edelstein effect in the graphene or the spin Hall effect of a TMDC (Transition Metal Dichalcogenide) material in order to replace CMOS transistors and extend Moore's Law, and further provides a logic gate using the graphene Rashba spin transistor.

Processor elements are disclosed herein. A processor element comprises a silicon layer. The processor element further comprises a dielectric layer disposed upon and forming an interface with the silicon layer. The processor element further comprises a conductive via in contact with the dielectric layer, the conductive via comprising a metallic portion having an interface end closest to the dielectric layer and a distal end. A cross-sectional area of the interface end of the metallic portion of the conductive via is less than or equal to 100 nm by 100 nm. In use, the application of a bias potential to the distal end of the conductive via induces a quantum dot at the interface between the dielectric layer and the silicon layer, the quantum dot for confining one or more electrons or holes in the silicon layer. Methods are also described herein.

A silicon-based quantum device for confining charge carriers is provided. The device comprises: a substrate having a first planar region 137; a silicon layer 32 which forms part of the substrate and includes a step 33 with an edge 34 and a second planar region 135, wherein the second planar region 135 is substantially parallel to and offset from the first planar region 137; a first electrically insulating layer 42 provided on the silicon layer 32, overlying the step 33; a first metallic layer 51, provided on the first electrically insulating layer 42, overlying the step 33, arranged to be electrically connected such that a first confinement region 10 can be induced in which a charge carrier or charge carriers can be confined at the edge 34; and a second metallic layer 52, provided overlying the second planar region 135 of the silicon layer, wherein the second metallic layer is: electrically separated from the first metallic layer 51; and arranged to be electrically connected such that a second confinement region 11 can be induced in which a charge carrier or charge carriers can be confined only in the second planar region 135 of the silicon layer 32 under the second metallic layer 52, and the first confinement region 10 is couplable to the second confinement region 11; wherein the first confinement region 10 is displaced from the second confinement region 11 in a direction that is perpendicular to the edge 34. A method of assembling a silicon-based quantum device and a method of using a silicon-based quantum device are also provided.

This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by electrolysis of water, the crystal structure of the active layer is changed between a ferromagnetic metal and an antiferromagnetic insulating body.

We disclose a magnetic device having a pair of coplanar thin-film magnetic electrodes arranged on a substrate with a relatively small edge-to-edge separation. In an example embodiment, the magnetic electrodes have a substantially identical footprint that can be approximated by an ellipse, with the short axes of the ellipses being collinear and the edge-to-edge separation between the ellipses being smaller than the size of the short axis. In some embodiments, the magnetic electrodes may have relatively small tapers that extend toward each other from the ellipse edges in the constriction area between the electrodes. Some embodiments may also include an active element inserted into the gap between the tapers and electrical leads connected to the magnetic electrodes for passing electrical current through the active element. When subjected to an appropriate external magnetic field, the magnetic electrodes can advantageously be magnetized to controllably enter parallel and antiparallel magnetization states.

A qubit device includes first and second linear qubit arrays. Each qubit array includes a semiconductor substrate, control gates configured to define a single row of quantum dots along the substrate, and nanomagnets distributed along the row of quantum dots such that a nanomagnet is arranged at every other pair of quantum dots of the row of quantum dots. Each nanomagnet has an out-of-plane magnetization with respect to the substrate, where the rows of the first and second arrays extend in a common row direction and are separated along a direction transverse to the row direction. The qubit device further includes superconducting resonators connecting pairs of quantum dots between the first and second arrays. Each pair of quantum dots in the first array is configured to couple with a superconducting resonator of the first set to connect with a different pair of quantum dots of the second array.

A method for determining an optimal spin/charge conversion operating point in a system including a pair of quantum dots including first and second quantum dots, the pair of quantum dots containing two charged particles and adopting a first charge state (2,0) in which both charged particles are in the first quantum dot, a second charge state (1,1) in which each quantum dot contains a charged particle, or a third charge state (0,2) in which both charged particles are in the second quantum dot, the charge state being a function of the voltage applied to at least two gates, the value of these voltages defining an operating point of the pair of quantum dots; the charged particles adopting a first spin state, called singlet spin state S, or a second spin state, called triplet spin state among the triplet spin state T0 or the triplet spin state T+/T−.