Disclosed is a photocoupler comprising: at least two lead frames; an optical channel structure including a light-emitting chip, a light-sensing chip, and a light-transmissive encapsulant body, wherein the light-emitting chip and the light-sensing chip are mounted and bonded on the lead frame and are coplanar, a light-emitting surface of the light-emitting chip and a light-sensing surface of the light-sensing chip face toward the same direction, the light-transmissive encapsulant body encloses the light-emitting chip and the light-sensing chip; and a light-reflecting package encloses the light-transmitting package, and all enclosing contact surface where the light-reflecting outer package contacts the light-transmissive encapsulant body is an optical reflective surface, wherein the light-reflecting encapsulant body and the light-transmissive encapsulant body are formed by double molding and epoxy molding, so that the light-transmissive encapsulant body and the light-reflecting encapsulant body are easy to be shaped.

A package for an optical sensor device has a double-molded structure in which a first resin molded portion and a second resin molded portion are integrated. The first resin molded portion has a structure in which peripheries of a die pad portion on which an optical sensor element is mounted and a part of leads are molded with a resin so as to be integrated. The second resin molded portion has a structure in which the periphery of the first resin molded portion is molded with a resin so as to form an outer shape of the package. A glass substrate having a filter function is bonded to an upper surface of the resin molded portions to form a cavity in which is mounted the optical sensor element.

A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.

Photoelectric conversion device includes first region of first conductivity type arranged in semiconductor layer having first second surfaces, second region of second conductivity type arranged between the second surface and the first region and forming avalanche photodiode, separation region of the second conductivity type arranged between the first and second surfaces to surround the second region, contact region of the second conductivity type contacted to the separation region, first contact plug connected to the first region, and second contact plug connected to the contact region. The second region has shape of rectangle, and the second contact plug is arranged in diagonal direction of the rectangle. Distance between center of the first contact plug and center of the second contact plug is larger than distance between center of the second region and the center of the second contact plug.

According to one general aspect, an apparatus may include a memory circuit die configured to store a lookup table that converts first data to second data. The apparatus may also include a logic circuit die comprising combinatorial logic circuits configured to receive the second data. The apparatus may further include an optical via coupled between the memory circuit die and the logical circuit die and configured to transfer second data between the memory circuit die and the logic circuit die.

An x-ray detector can be small and have efficient cooling. In one embodiment, the x-ray detector can comprise a thermoelectric cooler (TEC) with upper electrical connections, a support, a cap, and a silicon drift detector (SDD). A planar side of the support can be directly affixed to upper electrical connections of the TEC. The support can have a non-planar side, opposite of the planar side, with a raised structure. A bottom face of the cap can be affixed to the raised structure, forming a cavity between the cap and the non-planar side of the support. The SDD can be affixed to a top face of the cap. In another embodiment, the non-planar side of the support can face the TEC. In another embodiment, a PIN photodiode can be directly affixed to a plate and the plate directly affixed to upper electrical connections of the TEC.

An electronic component includes a substrate, an element mounted on a center portion of the substrate, a first terminal portion provided on the substrate at an edge of a first end portion of the substrate as seen in the element, and a second terminal portion provided on the substrate at an edge of a second end portion. The first terminal portion includes a first edge and a second edge in a direction perpendicular to a first direction from the element toward the first end portion and a length of the first edge is different from that of the second edge. The second terminal portion includes a third edge and a fourth edge in the direction and a length of the third edge is different from that of the fourth edge.

A device includes a semiconductor chip, and a semiconductor chip package in which the semiconductor chip is packaged. The semiconductor chip has a first major surface opposite a second major surface, and a set of four edges extending between the first major surface and the second major surface. The semiconductor chip package includes at least first and second electrodes exposed to an exterior of the semiconductor chip package and positioned apart from the semiconductor chip. The at least first and second electrodes overlap only one edge of the semiconductor chip. The semiconductor chip package also includes a filler that is molded between the semiconductor chip and each of the at least first and second electrodes.

The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising:—an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and—a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

Provided is a photodetection apparatus which includes a mounting board, and an optical sensor device that includes a first surface on the mounting board side and a second surface on a side opposite to the mounting board, and is mounted on the mounting board. The optical sensor device includes an optical sensor that includes a light receiving surface on the second surface side, a signal processing circuit that is electrically connected to the optical sensor, and a lead frame that is provided on the second surface side with respect to the signal processing circuit, and shields a surface of the signal processing circuit on the second surface side. The mounting board has a conductive pattern that faces the signal processing circuit and shields a surface of the signal processing circuit on the first surface side.