A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, an opaque support (e.g., a ring-shaped solder mask) disposed on the sensor chip, and a light permeable layer disposed on the opaque support. The sensor chip includes a sensing region. The opaque support surrounds the sensing region, and inner lateral sides of the opaque support form a light-scattering loop wall. The light permeable layer, the light-scattering loop wall of the opaque support, and the sensor chip jointly define an enclosed space therein. When light passes through the light permeable layer and impinges onto the light-scattering loop wall at an incident angle, the light-scattering loop wall scatters the light into multiple rays at angles different from the incident angle.

A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate; forming a first doped region of a first conductivity type and a second doped region of a second conductivity type in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; depositing a barrier layer over the first doped region; and annealing the barrier layer to form a second silicide layer on the first doped region.

An indoor light energy harvesting meter is described that includes a solar module including at least one photovoltaic cell to capture ambient light energy; and a circuit module coupled to the solar module. The circuit module may include a power management circuit configured to convert the ambient light energy captured by the solar module into electric energy; and a micro-controller configured to control the power management circuit and to receive the electric energy from the power management circuit to monitor an amount of indoor harvestable power. The micro-controller may monitor the amount of indoor harvestable power and generate parameters including one or more of an accumulated harvestable power, an instantaneous harvestable power, or a peak instantaneous harvestable power. The indoor light energy harvesting meter may include a display coupled to the micro-controller and configured to display one or more parameters associated with the amount of indoor harvestable power.

The present invention relates to an optical sensor, a detector comprising the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical sensor and the detector. Furthermore, the invention relates to a human-machine interface, an entertainment device, a scanning system, a tracking system, a stereoscopic system, and a camera. The optical sensor (110) comprises a layer (112) of at least one photoconductive material (114), at least two individual electrical contacts (136, 136′) contacting the layer (112) of the photoconductive material (114), and a cover layer (116) deposited on the layer (112) of the photoconductive material (114), wherein the cover layer (116) is an amorphous layer comprising at least one metal-containing compound (120). The optical sensor (110) can be supplied as a non-bulky hermetic package which, nevertheless, provides a high degree of protection against possible degradation by humidity and/or oxygen. Moreover, the cover layer (116) is capable of activating the photoconductive material (114) which results in an increased performance of the optical sensor (110). Further, the optical sensor (110) may be easily manufactured and integrated on a circuit carrier device.

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

Provided is a photodetection apparatus which includes a mounting board, and an optical sensor device that includes a first surface on the mounting board side and a second surface on a side opposite to the mounting board, and is mounted on the mounting board. The optical sensor device includes an optical sensor that includes a light receiving surface on the second surface side, a signal processing circuit that is electrically connected to the optical sensor, and a lead frame that is provided on the second surface side with respect to the signal processing circuit, and shields a surface of the signal processing circuit on the second surface side. The mounting board has a conductive pattern that faces the signal processing circuit and shields a surface of the signal processing circuit on the first surface side.

A single servo control loop for amplifier gain control based on signal power change over time or system to system, having an amplifier configured to receive an input signal on an amplifier input and generate an amplified signal on an amplifier output. The differential signal generator processes the amplified signal to generate differential output signals. The single servo control loop processes the differential output signal to generates one or more gain control signals and one or more current sink control signals. A gain control system receives a gain control signal and, responsive thereto, controls a gain of one or more amplifiers. A current sink receives a current sink control signal and, responsive thereto, draws current away from the amplifier input. Changes in input power ranges generate changes in the integration level of the differential signal outputs which are detected by the control loop, and responsive thereto, the control loop dynamically adjusts the control signals.

A solar cell module comprising a plurality of solar cells mounted on a flexible support, the support comprising a conductive layer on the top surface thereof divided into two electrically isolated portions—a first conductive portion and a second conductive portion. Each solar cell comprises a front surface, a rear surface, and a first contact on the rear surface and a second contact on the front surface. Each one of the plurality of solar cells is placed on the first conductive portion with the first contact electrically connected to the first conductive portion so that the solar cells are connected through the first conductive portion. A second contact of each solar cell is then connected to the second conductive portion by a respective interconnect.

A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.