The present disclosure provides an electronic package. The electronic package includes a substrate, a first electronic component, an encapsulant, and a shielding layer. The substrate has a first upper surface, a second upper surface, and a first lateral surface extending between the first upper surface and the second upper surface. The first electronic component is disposed on the substrate. The encapsulant coves the first electronic component and the first lateral surface of the substrate. The shielding layer covers the encapsulant. The shielding layer is spaced apart from the first lateral surface of the substrate.

Disclosed is an opto-electronic device including a semiconducting substrate, a layered interface including at least one layer, the layered interface having a first surface in contact with a surface of the semiconducting substrate and the layered interface being adapted for passivating the surface of the semiconducting substrate, the layered interface having a second surface and the layered interface being adapted for electrically insulating the first surface from the second surface, and a textured surface structure including a plurality of nanowires and a transparent dielectric coating, the textured surface structure being in contact with the second surface of the layered interface, the plurality of nanowires protruding from the second surface and the plurality of nanowires being embedded between the second surface and the transparent dielectric coating.

The invention is directed to a method for the production of an optoelectronic module including a support (5) and an additional layer, said support being formed by an assembly (25) which has no optoelectronic properties and which comprises, successively, a metal substrate (27), a dielectric coating (29) disposed on the metal substrate, and an electrically conductive layer (31) disposed on the dielectric coating. The production method comprises: a step of providing the support and performing a method in which the support is checked, or providing the support after it has already been checked; and a step of depositing at least one additional layer on the electrically conductive layer. The method in which support is checked comprises the following steps: electrical excitation of the support by bringing the metal substrate and the electrically conductive layer into electrical contact with a voltage source (33); and photothermal examination of the excited support so as to detect any possible fault (49, 51) located at least partially in the dielectric coating (29) and to provide a photothermal examination result.

The invention is directed to a method for the production of an optoelectronic module including a support (5) and an additional layer, said support being formed by an assembly (25) which has no optoelectronic properties and which comprises, successively, a metal substrate (27), a dielectric coating (29) disposed on the metal substrate, and an electrically conductive layer (31) disposed on the dielectric coating. The production method comprises: a step of providing the support and performing a method in which the support is checked, or providing the support after it has already been checked; and a step of depositing at least one additional layer on the electrically conductive layer. The method in which support is checked comprises the following steps: electrical excitation of the support by bringing the metal substrate and the electrically conductive layer into electrical contact with a voltage source (33); and photothermal examination of the excited support so as to detect any possible fault (49, 51) located at least partially in the dielectric coating (29) and to provide a photothermal examination result.

The solar cell includes a plurality of light-receiving-side finger electrodes on a light-receiving surface of a photoelectric conversion section having a semiconductor junction. The light-receiving surface of the photoelectric conversion section is covered with a first insulating layer. Each light-receiving-side finger electrodes include: a first metal seed layer provided between the photoelectric conversion section and the first insulating layer; and a first plating metal layer being conduction with the first metal seed layer through openings formed in the first insulating layer. The solar cell includes an isolated plating metal layer pieces contacting neither the light-receiving-side finger electrodes nor the back-side finger electrodes. On the surface of the first insulating layer, an isolated plating metal crowded region is present in a form of a band-shape extending parallel to an extending direction of the light-receiving-side finger electrodes.

A solar cell module capable of preventing the occurrence of a PID failure in a solar photovoltaic power generation system with a MW capacity, said system being used in a high-temperature high-humidity environment; and a method for manufacturing this solar cell module. A solar cell module which comprises a protection glass material and a sealing material on a light receiving surface side of a substrate, and which also comprises an oxide layer between the substrate and the protection glass material, said oxide layer containing a metal element and silicon. It is preferable that the oxide layer contains at least one metal element selected from the group consisting of magnesium, aluminum, titanium, vanadium, chromium, manganese, zirconium, niobium and molybdenum. It is also preferable that the oxide layer has a refractive index of from 1.5 to 2.3 (inclusive) with respect to incident light having a wavelength of 587 nm.

An optical sensor includes a substrate having a plurality of first light receiving elements in a surface, and a light blocking film having a plurality of first openings. The first light receiving elements are provided such that a direction of travel of incident light defined by each of the first openings is different from a thickness direction of the substrate and form at least one light receiving element set in which an angle of incidence defined between the direction of travel of the incident light and the thickness direction is the same with respect to the light receiving elements. In a view projected in the thickness direction, a positional relationship between the first light receiving elements included in a light receiving element set and the corresponding first openings has rotational symmetry of order 3 or more about an axis along the thickness direction.

A solar cell includes: a semiconductor substrate formed of n-type crystalline silicon; a first stack formed of amorphous silicon in a first region on a first principle surface of the semiconductor substrate; a second stack formed of amorphous silicon in a second region different from the first region on the first principle surface; and a third stack formed of amorphous silicon on a second principle surface of the semiconductor substrate opposite from the first principle surface. The second stack has an oxygen concentration that is higher than that of the first stack.

A sensing device includes a substrate, two chips, and a shielding structure. The two chips are respectively defined as an emitting chip and a receiving chip. The emitting chip can emit a sensing light beam, the receiving chip can receive the sensing light beam, and the two chips are fixed in position on the substrate at intervals. At least one of the chips is electrically connected to the substrate through at least one wire, and a position where the wire is connected to the substrate is located between the two chips. The shielding structure is formed on the substrate. The shielding structure is located between the two chips, and the shielding structure covers the wire and a portion of the chip connected to the wire. Compared with the conventional photo-plethysmography sensor, the sensing device has the advantage of a smaller size.

A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.