The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.

A solar cell includes: a semiconductor substrate formed of n-type crystalline silicon; a first stack formed of amorphous silicon in a first region on a first principle surface of the semiconductor substrate; a second stack formed of amorphous silicon in a second region different from the first region on the first principle surface; and a third stack formed of amorphous silicon on a second principle surface of the semiconductor substrate opposite from the first principle surface. The second stack has an oxygen concentration that is higher than that of the first stack.

The present disclosure relates to adhesives useful in preventing drifting during lamination of light redirecting films applied to photovoltaic cells. The adhesives of the present disclosure have other useful applications in bonding and/or affixing other solar energy components.

A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

A transparent photovoltaic cell is proposed. The transparent photovoltaic cell may include a transparent substrate, a plurality of micro-pillars arranged on an upper part of the transparent substrate and formed with respective transparent windows, through which incident sunlight transmits, on respective upper parts thereof. The transparent photovoltaic cell may also include a photoelectric converter formed on an upper surface of the transparent substrate between each of the plurality of micro-pillars and on side surfaces of each micro-pillar, and configured to generate power through absorption of incident sunlight.

An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein the upper first solar subcell covers less than the entire upper surface of the second solar subcell, leaving an exposed portion of the second solar subcell that lies in the path of the incoming light beam.

A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein the upper first solar subcell covers less than the entire upper surface of the second solar subcell, leaving an exposed portion of the second solar subcell that lies in the path of the incoming light beam.

A solar panel includes a plurality of photovoltaic cells embedded in a layer of encapsulant. A textured and/or colored layer is positioned on a back side of the layer of encapsulant. The textured and/or colored layer matches a color and/or texture of the plurality of photovoltaic cells. A top layer is positioned on a front side of the layer of encapsulant.

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.