A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

The present disclosure relates to a solid-state light emitting device, a solid state light absorbing device and methods for fabricating the same. In particular, the present disclosure relates to a light emitting device comprising: a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer; a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer; and electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer; wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.

A novel electric rectifier for use in a rectenna device is provided. The rectenna device can advantageously be used in a variety of applications. The electric rectifier comprises an integrated structure comprising: a diode structure comprising first and second electrodes located in first and second conductive layers respectively and an insulating layer between them, the diode structure being configured and operable for receiving an input signal and generating output signal indicative thereof, and a compensation structure electrically connected in parallel to said diode structure and being configured to compensate the parasitic capacitance of the diode structure when a frequency spectrum of the input signal is beyond the diode's cutoff frequency.

A novel electric rectifier for use in a rectenna device is provided. The rectenna device can advantageously be used in a variety of applications. The electric rectifier comprises an integrated structure comprising: a diode structure comprising first and second electrodes located in first and second conductive layers respectively and an insulating layer between them, the diode structure being configured and operable for receiving an input signal and generating output signal indicative thereof, and a compensation structure electrically connected in parallel to said diode structure and being configured to compensate the parasitic capacitance of the diode structure when a frequency spectrum of the input signal is beyond the diode's cutoff frequency.

The present invention provides a method for enhancing the efficiency of a photovoltaic module by subjecting it to extremely-low-frequency (ELF) electromagnetic radiation (EMR). The ELF EMR can be provided by a plurality of identical Jacob's ladders and the traveling arcs generated thereby. Alternatively, the ELF EMR can be provided by passing the photovoltaic module over an array of quartz discharge tubes in which arcs are generated between pairs of tungsten electrodes. The photovoltaic module is subjected to multiple passes in order to provide an optimum level of enhancement to the module.

The present invention provides a method for enhancing the efficiency of a photovoltaic module by subjecting it to extremely-low-frequency (ELF) electromagnetic radiation (EMR). The ELF EMR can be provided by a plurality of identical Jacob's ladders and the traveling arcs generated thereby. Alternatively, the ELF EMR can be provided by passing the photovoltaic module over an array of quartz discharge tubes in which arcs are generated between pairs of tungsten electrodes. The photovoltaic module is subjected to multiple passes in order to provide an optimum level of enhancement to the module.

The present disclosure relates to a resistive switching element in which polarization of a ferroelectric material layer and electron-hole separation phenomenon of a two dimensional semiconducting material layer are combined to induce resistive switching phenomenon, and a photovoltaic device such as a solar cell, including the resistive switching element.

The present disclosure relates to a resistive switching element in which polarization of a ferroelectric material layer and electron-hole separation phenomenon of a two dimensional semiconducting material layer are combined to induce resistive switching phenomenon, and a photovoltaic device such as a solar cell, including the resistive switching element.

A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.