Patent classifications
H01L31/06
APPROACH FOR VEHICLE NANO-RECTENNA PANEL
A method of designing a nano-rectenna panel (NRP) of a vehicle includes generating one or more performance benchmarks associated with nano-rectenna devices that comprise the NRP. A material for the nano-rectenna devices is identified based on one or more of the one or more performance benchmarks. The method also includes designing the NRP based on the material.
SOLAR CELL AND SOLAR CELL PANEL INCLUDING THE SAME
Disclosed is a solar cell panel including: a semiconductor substrate having a long axis and a short axis that intersect; a first conductivity type region formed on one surface of the semiconductor substrate; a second conductivity type region formed on the other surface of the semiconductor substrate; a first electrode electrically connected to the first conductivity type region; and a second electrode electrically connected to the second conductivity type region. The first electrode includes: a plurality of finger lines positioned in a first direction parallel to the long axis and being parallel to each other; and a plurality of bus bars including a plurality of pad portions positioned in a second direction parallel to the short axis. The plurality of pad portions include a first outer pad and a second outer pad located on opposite ends of the plurality of bus bars in the second direction, respectively.
SOLAR CELL AND SOLAR CELL PANEL INCLUDING THE SAME
Disclosed is a solar cell panel including: a semiconductor substrate having a long axis and a short axis that intersect; a first conductivity type region formed on one surface of the semiconductor substrate; a second conductivity type region formed on the other surface of the semiconductor substrate; a first electrode electrically connected to the first conductivity type region; and a second electrode electrically connected to the second conductivity type region. The first electrode includes: a plurality of finger lines positioned in a first direction parallel to the long axis and being parallel to each other; and a plurality of bus bars including a plurality of pad portions positioned in a second direction parallel to the short axis. The plurality of pad portions include a first outer pad and a second outer pad located on opposite ends of the plurality of bus bars in the second direction, respectively.
Solid-state image pickup element and image pickup apparatus
A solid-state image pickup element including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.
Solid-state image pickup element and image pickup apparatus
A solid-state image pickup element including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.
Biomolecule-carbon nanostructure nanocomposites for optoelectronic devices
An optoelectronic device comprises a nanocomposite comprising a carbon nanostructure having a surface and a biomolecule adsorbed on the surface and forming a heterojunction at the interface of the carbon nanostructure and the biomolecule, the carbon nanostructure and the biomolecule each characterized by respective conduction band edges and valence band edges. The device further comprises first and second electrodes in electrical communication with the nanocomposite. The conduction band edge offset, the valence band edge offset, or both, across the heterojunction is greater in energy than the binding energy of an exciton generated in the carbon nanostructure or the biomolecule upon the absorption of light such that the exciton dissociates at the heterojunction to an electron, which is injected into one of the carbon nanostructure and the biomolecule, and a hole, which is injected into the other of the carbon nanostructure and the biomolecule.
LASER-ASSISTED MANUFACTURING SYSTEM AND ASSOCIATED METHOD OF USE
A laser-assisted microfluidics manufacturing process has been developed for the fabrication of additively manufactured structures. Roll-to-roll manufacturing is enhanced by the use of a laser-assisted electrospray printhead positioned above the flexible substrate. The laser electrospray printhead sprays microdroplets containing nanoparticles onto the substrate to form both thin-film and structural layers. As the substrate moves, the nanoparticles are sintered using a laser beam directed by the laser electrospray printhead onto the substrate.
PHOTOVOLTAIC GENERATION SYSTEM AND METHOD FOR USING THE SAME
A photovoltaic generation system includes: a solar cell array formed with one or more solar cell modules; and a power conditioner, wherein each of the solar cell modules includes one or more solar cells, the photovoltaic generation system further has a first conductive wire connected to a conductor parts which is provided at each of the solar cell modules and which is insulated from the solar cells, and a constant voltage power supply whose one end is connected to the first conductive wire, and a potential is supplied to the conductor parts by the constant voltage power supply. As a result, the photovoltaic generation system which can suppress degradation of solar cell characteristics due to PID while suppressing increase in manufacturing cost of the solar cell module is provided.
PHOTOVOLTAIC GENERATION SYSTEM AND METHOD FOR USING THE SAME
A photovoltaic generation system includes: a solar cell array formed with one or more solar cell modules; and a power conditioner, wherein each of the solar cell modules includes one or more solar cells, the photovoltaic generation system further has a first conductive wire connected to a conductor parts which is provided at each of the solar cell modules and which is insulated from the solar cells, and a constant voltage power supply whose one end is connected to the first conductive wire, and a potential is supplied to the conductor parts by the constant voltage power supply. As a result, the photovoltaic generation system which can suppress degradation of solar cell characteristics due to PID while suppressing increase in manufacturing cost of the solar cell module is provided.
Hot-carrier photoelectric conversion method
The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy. Further, the present invention increases the quantity of photons absorbed, and makes electrons and holes be quickly conducted outside, thereby increasing photoelectric conversion efficiency, and creating electric energy with a high open-circuit voltage and a high current.