A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second sub cell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell.

A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second sub cell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell.

A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on a major surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

The present application relates to an organic solar cell including: a first electrode; a second electrode which is disposed to face the first electrode; and an organic material layer having one or more layers which includes a photoactive layer disposed between the first electrode and the second electrode, in which one or more layers of the organic material layer include two or more regions having different thicknesses.

The present application relates to an organic solar cell including: a first electrode; a second electrode which is disposed to face the first electrode; and an organic material layer having one or more layers which includes a photoactive layer disposed between the first electrode and the second electrode, in which one or more layers of the organic material layer include two or more regions having different thicknesses.

A method of making a copper oxide/inorganic thin film tandem semiconductor device including the steps of: depositing a textured buffer layer on an amorphous substrate, depositing a copper-inorganic film from a solid phase eutectic alloy on said buffer layer, and introducing O.sub.2 to the copper on said inorganic film, forming a copper oxide thin film on said inorganic film.

A method of making a copper oxide/inorganic thin film tandem semiconductor device including the steps of: depositing a textured buffer layer on an amorphous substrate, depositing a copper-inorganic film from a solid phase eutectic alloy on said buffer layer, and introducing O.sub.2 to the copper on said inorganic film, forming a copper oxide thin film on said inorganic film.

Disclosed is a solar cell panel including: a semiconductor substrate having a long axis and a short axis that intersect; a first conductivity type region formed on one surface of the semiconductor substrate; a second conductivity type region formed on the other surface of the semiconductor substrate; a first electrode electrically connected to the first conductivity type region; and a second electrode electrically connected to the second conductivity type region. The first electrode includes: a plurality of finger lines positioned in a first direction parallel to the long axis and being parallel to each other; and a plurality of bus bars including a plurality of pad portions positioned in a second direction parallel to the short axis. The plurality of pad portions include a first outer pad and a second outer pad located on opposite ends of the plurality of bus bars in the second direction, respectively.

Disclosed is a solar cell panel including: a semiconductor substrate having a long axis and a short axis that intersect; a first conductivity type region formed on one surface of the semiconductor substrate; a second conductivity type region formed on the other surface of the semiconductor substrate; a first electrode electrically connected to the first conductivity type region; and a second electrode electrically connected to the second conductivity type region. The first electrode includes: a plurality of finger lines positioned in a first direction parallel to the long axis and being parallel to each other; and a plurality of bus bars including a plurality of pad portions positioned in a second direction parallel to the short axis. The plurality of pad portions include a first outer pad and a second outer pad located on opposite ends of the plurality of bus bars in the second direction, respectively.

A number of micro-sized rectangular dot-like n-type semiconductor regions 121 are created in a p-type semiconductor region which is a base body 11. Contact parts 14, each of which is in contact with one n-type semiconductor region 121 and almost entirely covers the same region, are mutually connected by a wire part 15 as a common cathode terminal. The n-type semiconductor regions 121 receives no light; their function is to collect carriers generated within and outside the surrounding depletion layers. Appropriate setting of the spacing of the n-type semiconductor regions 121 enables efficient collection of the carriers generated in the p-type semiconductor region while improving the SN ratio of the photo-detection signal by a noise-reduction effect due to a decrease in the p-n junction capacitance. Carriers originating from light of shorter wavelengths are barely reflected in the photo-detection signal. Thus, unfavorable influences of the shorter wavelengths of light are eliminated.