Disclosed is a solar cell panel including: a semiconductor substrate having a long axis and a short axis that intersect; a first conductivity type region formed on one surface of the semiconductor substrate; a second conductivity type region formed on the other surface of the semiconductor substrate; a first electrode electrically connected to the first conductivity type region; and a second electrode electrically connected to the second conductivity type region. The first electrode includes: a plurality of finger lines positioned in a first direction parallel to the long axis and being parallel to each other; and a plurality of bus bars including a plurality of pad portions positioned in a second direction parallel to the short axis. The plurality of pad portions include a first outer pad and a second outer pad located on opposite ends of the plurality of bus bars in the second direction, respectively.

A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.

A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.

In methods and apparatus for improving the power generated, and thus efficiency of solar cells, a double or triple junction tandem solar cell that has one or two photon filters of the invention in between the solar cell layers, respectively. The photon filter is arranged to reflect photons with wavelength shorter than λx and arranged to be transparent to photons of wavelength longer than λx by focussing the lower energy photons out of small area apertures on the other side of the photon filter and arranging the other side of the photon filter to reflect at least some of the photons of wavelength longer than λx. By using the photon filters of the invention in between the solar cell layers, photons can be trapped between filters to solar cell layers at an energy at which the quantum efficiency of the solar cell layer is the best.

In methods and apparatus for improving the power generated, and thus efficiency of solar cells, a double or triple junction tandem solar cell that has one or two photon filters of the invention in between the solar cell layers, respectively. The photon filter is arranged to reflect photons with wavelength shorter than λx and arranged to be transparent to photons of wavelength longer than λx by focussing the lower energy photons out of small area apertures on the other side of the photon filter and arranging the other side of the photon filter to reflect at least some of the photons of wavelength longer than λx. By using the photon filters of the invention in between the solar cell layers, photons can be trapped between filters to solar cell layers at an energy at which the quantum efficiency of the solar cell layer is the best.

A first pixel electrode electrically connected to a first transistor, a second pixel electrode electrically connected to a second transistor, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode, a second light-emitting layer formed over the second pixel electrode and overlapping the second pixel electrode are provided, the first light-emitting layer includes a quantum-dot light-emitting that emits light of a first color, and the second light-emitting layer includes an organic light-emitting layer that emits light of a second color different from the first color.

A first pixel electrode electrically connected to a first transistor, a second pixel electrode electrically connected to a second transistor, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode, a second light-emitting layer formed over the second pixel electrode and overlapping the second pixel electrode are provided, the first light-emitting layer includes a quantum-dot light-emitting that emits light of a first color, and the second light-emitting layer includes an organic light-emitting layer that emits light of a second color different from the first color.

Provided is a photoelectric conversion element including a first electrode, an electron-transporting layer, a hole-transporting layer, and a second electrode, wherein the hole-transporting layer and the second electrode are in contact with each other, and the hole-transporting layer satisfies the following formula:
0%<Rc(50)0.75%
where an average thickness of the hole-transporting layer is determined as X (nm), and Rc(50) is a ratio of an area of projected parts that are projected from a standard line towards the second electrode, where the standard line is present at a position that is away, by X+50 (nm), from an opposite surface of the hole-transporting layer to a surface of the hole-transporting layer in contact with the second electrode.

Provided is a photoelectric conversion element including a first electrode, an electron-transporting layer, a hole-transporting layer, and a second electrode, wherein the hole-transporting layer and the second electrode are in contact with each other, and the hole-transporting layer satisfies the following formula:
0%<Rc(50)0.75%
where an average thickness of the hole-transporting layer is determined as X (nm), and Rc(50) is a ratio of an area of projected parts that are projected from a standard line towards the second electrode, where the standard line is present at a position that is away, by X+50 (nm), from an opposite surface of the hole-transporting layer to a surface of the hole-transporting layer in contact with the second electrode.

The disclosure provides a silicon carbide detector and a preparation method therefor. The silicon carbide detector comprises: a wafer, the wafer sequentially comprises, from bottom to top, a substrate, a silicon carbide P+ layer, an N-type silicon carbide insertion layer, an N+ type silicon carbide multiplication layer, an N-type silicon carbide absorption layer and a silicon carbide N+ layer; the doping concentration of the N-type silicon carbide insertion layer gradually increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer gradually decreases from bottom to top; a mesa is etched on the wafer, and the mesa is etched to an upper surface of the silicon carbide P+ layer; an N-type electrode is arranged on an upper surface of the mesa, and a P-type electrode is arranged on an upper surface of a non-mesa region.