Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

The invention provides a detection device including a fewer types of elements for detection of radial rays and configured to appropriately detect the radial rays. A detection device 1 includes a light source 30 configured to emit radial rays, a detection circuit board 10 provided with a plurality of detection circuits each configured to output a signal according to a control signal supplied from a driving circuit 201, and a signal reading circuit 202 configured to acquire the signals outputted from the plurality of detection circuits. The detection circuits each include a detection thin film transistor having threshold voltage varied in accordance with irradiation of the radial rays. The signal reading circuit 202 transmits, to an image processing device 40, a difference between a signal outputted from each of the detection circuits in accordance with a control signal supplied before irradiation of the radial rays and a signal outputted from the detection circuit in accordance with a control signal supplied after irradiation of the radial rays.

The invention relates to an X-ray detector device (10) for detection of X-ray radiation at an inclined angle relative to the X-ray radiation, an X-ray imaging system (1), an X-ray imaging method, and a computer program element for controlling such device or system for performing such method and a computer readable medium having stored such computer program element. The X-ray detector device (10) comprises a cathode surface (11) and an anode surface (12). The cathode surface (11) and the anode surface (12) are displaced by a separation layer (13) allowing charge transport (T) between the cathode surface (11) and the anode surface (12) in response to X-ray radiation incident during operation on the cathode surface (11). The anode surface (12) is segmented into anode pixels (121) and the cathode surface (11) is segmented into cathode pixels (111). At least one of the cathode pixels (111) is assigned to at least one of the anode pixels (121) in a coupling direction (C) inclined relative to the cathode surface (11). At least one of the cathode pixels (111) is configured to be at a voltage offset relative to an adjacent cathode pixel and at least one of the anode pixels (121) is configured to be at a voltage offset relative to an adjacent anode pixel (121). The voltage offset is configured to converge the charge transport (T) in a direction parallel to the coupling direction (C).

A detector for detecting radiation is generally described. The detector can comprise at least one ionic semiconductor material. For example, the ionic semiconductor material comprises a thallium halide and/or an indium halide. Electrical contacts are formed on the semiconductor material to provide a voltage to the detector during use. At least one of the electrical contacts may comprise a liquid that contains ions. In some instances, at least one electrical contact comprises a metal, such as Cr, Ti, W, Mo, or Pb. In some embodiments, the detector comprises both an electrical contact comprising liquid comprising ions and an electrical contact comprising a metal selected from a group consisting of Cr, Ti, W, Mo, and Pb. Detectors for detecting radiation, as described herein, may have beneficial properties.

Radiation detectors are disclosed. The radiation detectors comprise a substrate and at least one radiation sensitive region on the substrate, the at least one radiation sensitive region comprising an array of elongate nanostructures projecting from the substrate. Methods of manufacture of such radiation detectors are also disclosed.

A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

PbO-based photoconductive X-ray imaging devices are disclosed in which the PbO photoconductive layer exhibits an amorphous crystal structure. According to selected embodiments, the amorphous PbO photoconductive layer may be formed by providing a substrate inside an evacuated evaporation chamber and evaporating lead oxide to deposit a photoconductive lead oxide layer onto the substrate, while subjecting the photoconductive layer to ion bombardment with oxygen ions having an ion energy between 25 and 100 eV. X-ray direct detection imaging devices formed from such amorphous PbO photoconductive layers are shown to exhibit image lag that is suitable for fluoroscopic imaging.

One feature pertains to a microdosimeter cell array that includes a plurality of microdosimeter cells each having a semiconductor volume adapted to generate a current in response to incident radiation. The semiconductor volumes of each of the plurality of microdosimeter cells have at least one of a size, a shape, a semiconductor type, and/or a semiconductor doping type and concentration that is associated with one or more cells or cell components of a human eye. A processing circuit is also communicatively coupled to the microdosimeter cell array and generates a signal based on the currents generated by the semiconductor volumes of the plurality of microdosimeter cells. The signal generated by the processing circuit is indicative of an amount of radiation absorbed by the microdosimeter cell array.

An X-ray detection substrate is provided. The X-ray detection substrate includes: a base, including at least a detection function region; a drive circuit layer, including a plurality of detection pixel circuits disposed in the detection function region; a first electrode layer, disposed in the detection function region and including a plurality of first electrodes that are disconnected from each other and arranged in an array, wherein each first electrode is correspondingly connected to one detection pixel circuit; a conversion material layer, disposed in the detection function region and covering the first electrode layer, wherein at least one surface, parallel to a thickness direction of the base, of the conversion material layer is an X-ray receiving surface; and a second electrode layer, disposed in the detection function region and covering the conversion material layer.