A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

A semiconductor radiation monitor (i.e., dosimeter) is provided that has an oxide charge storage region located on a first side of a semiconductor fin and a functional gate structure located on a second side of the semiconductor fin that is opposite the first side. Charges are created in the oxide charge storage region that is located on the first side of the semiconductor fin and detected on the second side of the semiconductor fin by the functional gate structure. Multiple semiconductor fins in parallel can form a dense and very sensitive semiconductor radiation monitor.

Disclosed herein is a radiation detector comprising: a substrate of an intrinsic semiconductor; a semiconductor single crystal in a recess in the substrate, the semiconductor single crystal having a different composition from the intrinsic semiconductor; a first electrical contact in electrical contact with the semiconductor single crystal; a second electrical contact on or in the substrate, and surrounding the first electrical contact or the semiconductor single crystal, wherein the second electrical contact is electrically isolated from the semiconductor single crystal; wherein the radiation detector is configured to absorb radiation particles incident on the semiconductor single crystal and to generate charge carriers.

A pixel structure of flat panel detection device, a flat panel detection device, and a camera system. The pixel structure of the flat panel detection device includes a photodiode configured to collect optical signals and convert the optical signals into electrical signals, the photodiode includes a positive terminal and a negative terminal, the negative terminal is connected to a bias voltage signal terminal; a signal amplification circuit, a signal input terminal of the signal amplification circuit is connected to the negative terminal of the photodiode, a signal output terminal of the signal amplification circuit is connected to a first node; a first switching transistor, a control electrode of the first switching transistor is connected to a scanning signal line, a first terminal of the first switching transistor is connected to a data signal line, and a second terminal of the first switching transistor is connected to the first node.

A flat panel detector includes: a substrate, a gate line and a read signal line define a detection region, a detection unit includes a first photoelectric converter, a thin film transistor and a second photoelectric converter, the first photoelectric converter and the second photoelectric converter are on two side of the thin film transistor and connected with it; a gate electrode layer of the thin film transistor is connected with the gate line, and a source electrode or a drain electrode of the thin film transistor is connected with the read signal line; a gap region is between the second photoelectric converter and at least one selected from a group consisting of the gate line defining the detection unit, the read signal line defining the detection unit and the thin film transistor, and an orthographic projection of the first photoelectric converter on the substrate at least covers the gap region.

An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.

A radiation detector includes a substrate having a plurality of charge collection electrodes, a radiation absorption layer disposed on one side with respect to the substrate and formed of a perovskite material, a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and each of the plurality of charge collection electrodes, and a protective member disposed on the one side with respect to the substrate and being in contact with at least portions opposite to each other in a side surface of the radiation absorption layer.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

A flat panel detector includes: a substrate, a gate line and a read signal line define a detection region, a detection unit includes a first photoelectric converter, a thin film transistor and a second photoelectric converter, the first photoelectric converter and the second photoelectric converter are on two side of the thin film transistor and connected with it; a gate electrode layer of the thin film transistor is connected with the gate line, and a source electrode or a drain electrode of the thin film transistor is connected with the read signal line; a gap region is between the second photoelectric converter and at least one selected from a group consisting of the gate line defining the detection unit, the read signal line defining the detection unit and the thin film transistor, and an orthographic projection of the first photoelectric converter on the substrate at least covers the gap region.