The light detection element includes a light-sensitive layer configured to generate a voltage when light is applied, a first electrode, and a second electrode. The light-sensitive layer is located between the first electrode and the second electrode. The second electrode is a metal containing at least one element selected from the group consisting of ruthenium, molybdenum, and tungsten.

A display comprises a plurality of autonomous pixels on a stretchable substrate. Each autonomous pixel comprises a display element and a control element arranged to sense an external stimulus and to generate, entirely within the autonomous pixel, a control signal to drive the display element based, at least in part, on a magnitude of the sensed external stimulus. The stretchable substrate comprises a plurality of less elastic regions separated by stretchable areas, where the less elastic regions are less stretchable than the surrounding stretchable areas and each control element of an autonomous pixel is located in or on a less elastic region of the stretchable substrate.

A light detection device includes an APD, a plurality of temperature compensation diodes, and a circuit unit. The plurality of temperature compensation diodes have different breakdown voltages lower than a breakdown voltage of the APD. The circuit unit puts any one of the plurality of temperature compensation diodes into a breakdown state. The circuit unit includes a plurality of terminals and a terminal. The plurality of terminals are respectively connected to electrodes of the mutually different temperature compensation diodes. The terminal is electrically connected to the APD and electrodes of the temperature compensation diodes.

A light detection device includes an APD, a plurality of temperature compensation diodes, and a circuit unit. The plurality of temperature compensation diodes have different breakdown voltages lower than a breakdown voltage of the APD. The circuit unit puts any one of the plurality of temperature compensation diodes into a breakdown state. The circuit unit includes a plurality of terminals and a terminal. The plurality of terminals are respectively connected to electrodes of the mutually different temperature compensation diodes. The terminal is electrically connected to the APD and electrodes of the temperature compensation diodes.

A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

According to an aspect, a detection device includes a substrate and a plurality of photodiodes arranged on the substrate. Each of the photodiodes comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate. Each of the photodiodes includes a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another, and a second region in which at least the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other. Adjacent first regions included in the plurality of first regions are coupled together by at least the p-type semiconductor layer.

An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13.sub.C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13.sub.B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.